This study investigates the spatial heterogeneity of Raman scattering and surface morphology in n-type Si (100) single crystals subjected to manganese ion implantation. Implantation was performed at 40 keV with doses from 5·10^15–1·10^17 ions/cm² into substrates with a phosphorus concentration of ~9.3·10^14 cm⁻³. Atomic force microscopy (AFM) and backscattering Raman spectroscopy were employed to evaluate surface topography and structural modifications. AFM micrographs revealed dose-dependent, nanoscale surface roughness and self-organized structures absent on pristine substrates. Unimplanted samples exhibited a Lorentzian sharp Raman peak at 520.0±1.0 cm⁻¹, characteristic of bulk crystalline silicon. Conversely, Mn-implanted samples displayed additional peaks (184, 291, 373, 468, 659, 798, and 804 cm⁻¹) associated with radiation-induced defects and complex nanoscale phases involving Si, Mn, and P atoms. The formation of deep Mn centers modifies carrier recombination dynamics and generates localized optical centers detectable via scattering intensity mapping. These findings demonstrate a non-destructive diagnostic approach for mapping deep-level impurity distributions in semiconductor device structures.
| Mualliflar | E. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, Zhisheng Nong |
|---|---|
| Jurnal | Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi |
| Nashriyot | Самарқанд давлат университети |
| ISSN | 2091-5446, 2181-1296 |
| Nashr sanasi | 2026-07-01 |
| Jild | 1 |
| Son | 3 |
| Betlar | 44-49 |
| Til | Ingliz |
| Ilmiy soha | Filologiya |
| DOI | 10.59251/2181-3973.2025.v1.138.1.3884 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.59251/2181-3973.2025.v1.138.1.3884 · Maqolaning asl sahifasi
| APA | E. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, & Zhisheng Nong (2026). SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON. Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 44-49. https://doi.org/10.59251/2181-3973.2025.v1.138.1.3884 |
|---|---|
| GOST (OAK) | E. Arzikulov va b. SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON // Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi. – 2026. – T. 1, № 3. – P. 44-49. – DOI: 10.59251/2181-3973.2025.v1.138.1.3884. |
| MLA | E. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, and Zhisheng Nong. “SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON.” Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 44-49, 2026. https://doi.org/10.59251/2181-3973.2025.v1.138.1.3884 |
| Chicago | E. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, and Zhisheng Nong. “SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON.” Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 44-49 (2026). https://doi.org/10.59251/2181-3973.2025.v1.138.1.3884 |
| Harvard | E. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, and Zhisheng Nong (2026) ‘SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON’, Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 44-49. https://doi.org/10.59251/2181-3973.2025.v1.138.1.3884 |
| BibTeX | @article{earzikulov2026,
title = {SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON},
author = {E. Arzikulov and F. Salaxitdinov and Yujin Wang and 呂紹瑋 and Teng Liu and Zhisheng Nong},
journal = {Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi},
year = {2026},
volume = {1},
number = {3},
pages = {44-49},
doi = {10.59251/2181-3973.2025.v1.138.1.3884},
url = {https://doi.org/10.59251/2181-3973.2025.v1.138.1.3884}
} |
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