SPATIAL HETEROGENEITY OF RAMAN SCATTERING AND SURFACE MORPHOLOGY IN Mn IMPLANTED SILICON

E. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, Zhisheng Nong

Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi · 2026-yil

Annotatsiya

This study investigates the spatial heterogeneity of Raman scattering and surface morphology in n-type Si (100) single crystals subjected to manganese ion implantation. Implantation was performed at 40 keV with doses from 5·10^15–1·10^17 ions/cm² into substrates with a phosphorus concentration of ~9.3·10^14 cm⁻³. Atomic force microscopy (AFM) and backscattering Raman spectroscopy were employed to evaluate surface topography and structural modifications. AFM micrographs revealed dose-dependent, nanoscale surface roughness and self-organized structures absent on pristine substrates. Unimplanted samples exhibited a Lorentzian sharp Raman peak at 520.0±1.0 cm⁻¹, characteristic of bulk crystalline silicon. Conversely, Mn-implanted samples displayed additional peaks (184, 291, 373, 468, 659, 798, and 804 cm⁻¹) associated with radiation-induced defects and complex nanoscale phases involving Si, Mn, and P atoms. The formation of deep Mn centers modifies carrier recombination dynamics and generates localized optical centers detectable via scattering intensity mapping. These findings demonstrate a non-destructive diagnostic approach for mapping deep-level impurity distributions in semiconductor device structures.

Maqola ma’lumotlari
MualliflarE. Arzikulov, F. Salaxitdinov, Yujin Wang, 呂紹瑋, Teng Liu, Zhisheng Nong
JurnalSamarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi
Nashr sanasi2026-07-01
Jild1
Son3
Betlar44-49
DOI10.59251/2181-3973.2025.v1.138.1.3884

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