Influence of the crystallographic orientation of the monocrystalline substrate on the current–voltage characteristics of NI/SIO₂/N-SI structures

E. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, S. Sattarov

Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi · 2026-yil

Annotatsiya

In this article, the electrophysical properties of Ni/SiO₂/n-Si metal-oxide-semiconductor (MOS) structures formed on n-type monocrystalline silicon substrates in the [111], [110], and [100] crystallographic orientations have been investigated. The study determined the influence of a thin tunnel oxide layer (2–4 nm) formed on the surface of the semiconductor monocrystalline substrate on the Schottky barrier parameters depending on the crystallographic orientation by analyzing their current-voltage characteristics (I-V). Based on the experimental results, energy band diagrams of the MOS structures were constructed, taking into account the interface states at the SiO₂/Si boundary. It was found that the Schottky barrier height changes depending on the crystallographic orientation of the substrate surface as φB[111] > φB[100] > φB[110]. The obtained results serve as a scientific basis for designing optimal parameters of microelectronic sensors and photoelectric converters with high sensitivity and selectivity.

Maqola ma’lumotlari
MualliflarE. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, S. Sattarov
JurnalSamarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi
NashriyotСамарқанд давлат университети
ISSN2091-5446, 2181-1296
Nashr sanasi2026-07-01
Jild1
Son3
Betlar68-75
TilIngliz
Ilmiy sohaKimyo
DOI10.59251/2181-3973.2025.v1.138.1.3889
Indeksga qo‘shilgan2026-09-02

DOI: 10.59251/2181-3973.2025.v1.138.1.3889 · Maqolaning asl sahifasi

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Iqtibos keltirish

APAE. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, & S. Sattarov (2026). INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES. Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 68-75. https://doi.org/10.59251/2181-3973.2025.v1.138.1.3889
GOST (OAK)E. Arzikulov va b. INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES // Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi. – 2026. – T. 1, № 3. – P. 68-75. – DOI: 10.59251/2181-3973.2025.v1.138.1.3889.
MLAE. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, and S. Sattarov. “INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES.” Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 68-75, 2026. https://doi.org/10.59251/2181-3973.2025.v1.138.1.3889
ChicagoE. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, and S. Sattarov. “INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES.” Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 68-75 (2026). https://doi.org/10.59251/2181-3973.2025.v1.138.1.3889
HarvardE. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, and S. Sattarov (2026) ‘INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES’, Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi, 1(3), 68-75. https://doi.org/10.59251/2181-3973.2025.v1.138.1.3889
BibTeX
@article{earzikulov2026,
  title = {INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES},
  author = {E. Arzikulov and T. Sharofova and 呂紹瑋 and Teng Liu and Zhisheng Nong and S. Sattarov},
  journal = {Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi},
  year = {2026},
  volume = {1},
  number = {3},
  pages = {68-75},
  doi = {10.59251/2181-3973.2025.v1.138.1.3889},
  url = {https://doi.org/10.59251/2181-3973.2025.v1.138.1.3889}
}

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