INFLUENCE OF THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE SUBSTRATE ON THE CURRENT–VOLTAGE CHARACTERISTICS OF NI/SIO₂/N-SI STRUCTURES

E. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, S. Sattarov

Samarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi · 2026-yil

Annotatsiya

In this article, the electrophysical properties of Ni/SiO₂/n-Si metal-oxide-semiconductor (MOS) structures formed on n-type monocrystalline silicon substrates in the [111], [110], and [100] crystallographic orientations have been investigated. The study determined the influence of a thin tunnel oxide layer (2–4 nm) formed on the surface of the semiconductor monocrystalline substrate on the Schottky barrier parameters depending on the crystallographic orientation by analyzing their current-voltage characteristics (I-V). Based on the experimental results, energy band diagrams of the MOS structures were constructed, taking into account the interface states at the SiO₂/Si boundary. It was found that the Schottky barrier height changes depending on the crystallographic orientation of the substrate surface as φB[111] > φB[100] > φB[110]. The obtained results serve as a scientific basis for designing optimal parameters of microelectronic sensors and photoelectric converters with high sensitivity and selectivity.

Maqola ma’lumotlari
MualliflarE. Arzikulov, T. Sharofova, 呂紹瑋, Teng Liu, Zhisheng Nong, S. Sattarov
JurnalSamarqand davlat universiteti ilmiy tadqiqotlar axborotnomasi
Nashr sanasi2026-07-01
Jild1
Son3
Betlar68-75
DOI10.59251/2181-3973.2025.v1.138.1.3889

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