In the paper, the effect of implantation of Na+ ions with different fluences on the density of states of Si(111) valence electrons has been studied by the methods of spectroscopy of elastically scattered electrons (SESE) and spectroscopy of characteristic energy loss (SCEL). It is shown that the experimentally observed shift of the maxima of the density of states of Si valence electrons is explained theoretically using the Keldysh diagram technique for an electron in a random field of impurity atoms by the strong disordering of the crystal structure of the ion-implanted Si(111) surface region.
| Mualliflar | Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., Рысбаев, А.С. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-08-21 |
| Jild | 21 |
| Son | 4 |
| Betlar | 229-234 |
| Til | Rus |
| DOI | 10.52304/.v21i4.110 |
DOI: 10.52304/.v21i4.110 · Maqolaning asl sahifasi
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