In the paper, the effect of implantation of Na+ ions with different fluences on the density of states of Si(111) valence electrons has been studied by the methods of spectroscopy of elastically scattered electrons (SESE) and spectroscopy of characteristic energy loss (SCEL). It is shown that the experimentally observed shift of the maxima of the density of states of Si valence electrons is explained theoretically using the Keldysh diagram technique for an electron in a random field of impurity atoms by the strong disordering of the crystal structure of the ion-implanted Si(111) surface region.
| Mualliflar | Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., Рысбаев, А.С. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2019-08-21 |
| Jild | 21 |
| Son | 4 |
| Betlar | 229-234 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v21i4.110 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v21i4.110 · Maqolaning asl sahifasi
| APA | Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., & Рысбаев, А.С. (2019). INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS. O‘zbekiston fizika jurnali, 21(4), 229-234. https://doi.org/10.52304/.v21i4.110 |
|---|---|
| GOST (OAK) | Нормурадов, М.Т. va b. INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 4. – P. 229-234. – DOI: 10.52304/.v21i4.110. |
| MLA | Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., and Рысбаев, А.С. “INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS.” O‘zbekiston fizika jurnali, 21(4), 229-234, 2019. https://doi.org/10.52304/.v21i4.110 |
| Chicago | Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., and Рысбаев, А.С. “INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS.” O‘zbekiston fizika jurnali, 21(4), 229-234 (2019). https://doi.org/10.52304/.v21i4.110 |
| Harvard | Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., and Рысбаев, А.С (2019) ‘INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS’, O‘zbekiston fizika jurnali, 21(4), 229-234. https://doi.org/10.52304/.v21i4.110 |
| BibTeX | @article{article2019,
title = {INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS},
author = {Нормурадов, М.Т. and Нормуродов, Д.А. and Хужаниёзов, Ж.Б. and Рысбаев, А.С.},
journal = {O‘zbekiston fizika jurnali},
year = {2019},
volume = {21},
number = {4},
pages = {229-234},
doi = {10.52304/.v21i4.110},
url = {https://doi.org/10.52304/.v21i4.110}
} |
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