INFLUENCE OF DISORDER IN THE CRYSTALLINE STRUCTURE OF ION-IMPLANTED SILICON ON THE DENSITY OF STATES OF VALENT ELECTRONS

Нормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., Рысбаев, А.С.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

In the paper, the effect of implantation of Na+ ions with different fluences on the density of states of Si(111) valence electrons has been studied by the methods of spectroscopy of elastically scattered electrons (SESE) and spectroscopy of characteristic energy loss (SCEL). It is shown that the experimentally observed shift of the maxima of the density of states of Si valence electrons is explained theoretically using the Keldysh diagram technique for an electron in a random field of impurity atoms by the strong disordering of the crystal structure of the ion-implanted Si(111) surface region.

Maqola ma’lumotlari
MualliflarНормурадов, М.Т., Нормуродов, Д.А., Хужаниёзов, Ж.Б., Рысбаев, А.С.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-08-21
Jild21
Son4
Betlar229-234
TilRus
DOI10.52304/.v21i4.110

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