RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM

Далиев , Х.С.

O‘zbekiston fizika jurnali · 2018-yil

Annotatsiya

Using the method of CC-DLTS the properties of the Si-SiO2 transition layer and relaxation processes in the system Si–SiO2 .are investigated. A scheme of various electronic relaxation processes of the charge occurring in silicon MIS structures is determined.

Maqola ma’lumotlari
MualliflarДалиев , Х.С.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2018-09-21
Jild20
Son5
Betlar291-294
TilRus
DOI10.52304/.v20i5.106

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