Using the method of CC-DLTS the properties of the Si-SiO2 transition layer and relaxation processes in the system Si–SiO2 .are investigated. A scheme of various electronic relaxation processes of the charge occurring in silicon MIS structures is determined.
| Mualliflar | Далиев , Х.С. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-09-21 |
| Jild | 20 |
| Son | 5 |
| Betlar | 291-294 |
| Til | Rus |
| DOI | 10.52304/.v20i5.106 |
DOI: 10.52304/.v20i5.106 · Maqolaning asl sahifasi
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