Using the method of CC-DLTS the properties of the Si-SiO2 transition layer and relaxation processes in the system Si–SiO2 .are investigated. A scheme of various electronic relaxation processes of the charge occurring in silicon MIS structures is determined.
| Mualliflar | Далиев , Х.С. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2018-09-21 |
| Jild | 20 |
| Son | 5 |
| Betlar | 291-294 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v20i5.106 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v20i5.106 · Maqolaning asl sahifasi
| APA | Далиев , Х.С. (2018). RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM. O‘zbekiston fizika jurnali, 20(5), 291-294. https://doi.org/10.52304/.v20i5.106 |
|---|---|
| GOST (OAK) | Далиев , Х.С. RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 5. – P. 291-294. – DOI: 10.52304/.v20i5.106. |
| MLA | Далиев , Х.С. “RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM.” O‘zbekiston fizika jurnali, 20(5), 291-294, 2018. https://doi.org/10.52304/.v20i5.106 |
| Chicago | Далиев , Х.С. “RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM.” O‘zbekiston fizika jurnali, 20(5), 291-294 (2018). https://doi.org/10.52304/.v20i5.106 |
| Harvard | Далиев , Х.С (2018) ‘RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM’, O‘zbekiston fizika jurnali, 20(5), 291-294. https://doi.org/10.52304/.v20i5.106 |
| BibTeX | @article{article2018,
title = {RELAXATION PROCESSES IN THE Si-SiO2 SYSTEM},
author = {Далиев , Х.С.},
journal = {O‘zbekiston fizika jurnali},
year = {2018},
volume = {20},
number = {5},
pages = {291-294},
doi = {10.52304/.v20i5.106},
url = {https://doi.org/10.52304/.v20i5.106}
} |
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