Development of nanomaterials to increase the performance of silicon electronics

Asanov, D.J., Ashirbekova, S.U.

Ilim ha’m ja’miyet · 2024-yil

Annotatsiya

The development of highly efficient and fast semiconductor components, as well as ultra-large integrated circuits (VLSI), requires the use of new materials in production processes. One of the most promising materials for modern microelectronics are metal silicides. These connections are widely used in solid-state electronics, in particular, to create rectifier and ohmic contacts, as well as conductive elements in integrated circuits. In addition, magnesium silicide single crystals exhibit excellent thermal efficiency characteristics, which makes magnesium and silicon attractive materials for creating thin-film semiconductor compounds such as MgSi, which have high thermal efficiency.

Maqola ma’lumotlari
MualliflarAsanov, D.J., Ashirbekova, S.U.
JurnalIlim ha’m ja’miyet
NashriyotНукус давлат педагогика институти
ISSN2010-720x, 2181-1555
Nashr sanasi2024-12-23
Son6-1
Betlar4-6
TilIngliz
Indeksga qo‘shilgan2026-08-26

Kalit so‘zlar

silisidlar, elemenlar tarkibi, VLSI (o‘ta keng ko‘lamli integral mikrosxemalar), faza tarkibi, elektron diffraktsiya sxemasi, силициды, элементный состав, СБИС (сверхбольшие интегральные схемы), фазовый состав, электронограмма, silicides, elemental composition, VLSIC (very large-scale integrated circuits), phase composition, electronogram

Iqtibos keltirish

APAAsanov, D.J., & Ashirbekova, S.U. (2024). DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS. Ilim ha’m ja’miyet, (6-1), 4-6. https://journal.ndpi.uz/index/article/view/2024-6-1-002
GOST (OAK)Asanov, D.J., Ashirbekova, S.U. DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS // Ilim ha’m ja’miyet. – 2024. – № 6-1. – P. 4-6.
MLAAsanov, D.J., and Ashirbekova, S.U. “DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS.” Ilim ha’m ja’miyet, (6-1), 4-6, 2024. https://journal.ndpi.uz/index/article/view/2024-6-1-002
ChicagoAsanov, D.J., and Ashirbekova, S.U. “DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS.” Ilim ha’m ja’miyet, (6-1), 4-6 (2024). https://journal.ndpi.uz/index/article/view/2024-6-1-002
HarvardAsanov, D.J., and Ashirbekova, S.U (2024) ‘DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS’, Ilim ha’m ja’miyet, (6-1), 4-6. https://journal.ndpi.uz/index/article/view/2024-6-1-002
BibTeX
@article{asanovdj2024,
  title = {DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS},
  author = {Asanov, D.J. and Ashirbekova, S.U.},
  journal = {Ilim ha’m ja’miyet},
  year = {2024},
  number = {6-1},
  pages = {4-6},
  url = {https://journal.ndpi.uz/index/article/view/2024-6-1-002}
}

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