It was studied how the single-layer quantum density of MoS2 changes according to the Fermi level under the action of a microwave field. It was shown that in 2D materials, a higher quantum density value serves to increase the operating speed and sensitivity of transistors, and the oxide density increases the durability of the material under an electric field.
| Mualliflar | Kosimova, M.O., Maxmudov, A.S. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2025-03-29 |
| Son | 2-1 |
| Betlar | 20-23 |
| Til | uz_Latn |
2D oʻlchamli p-n–o’tish, kvant sig‘imi, O‘YUCH maydon, oksid sig‘imi, bir qatlamli MoS2, 2D-размерный p–n-переход, квантовая плотность, поле сверхвысокой частоты поле, оксидная плотность, однослойная поверхность ферми квантовой плотнсоти MoS2, 2D-dimensional p–n junction, quantum density, microwave field, oxide density, single-layer Fermi surface quantum density MoS2
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