This work is devoted to the mathematical modeling of the diffusion method of impurity Zn and S doped into silicon. In the work, a model of three different diffusion mechanisms was developed, and the results of the calculations showed that the diffusion of Zn first, then S dopants, is preferable in the formation of ZnS binary nanoclusters in silicon.
| Mualliflar | Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y., Sodiqova, F.O. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2025-03-29 |
| Son | 2-1 |
| Betlar | 5-8 |
| Til | uz_Latn |
kremniy, oltingugurt, rux, diffuziya, model, кремний, сера, цинк, диффузия, модель, silicon, sulfur, zinc, diffusion, model
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