GaSb ASOSIDAGI TUNNEL DIODLARI VOLT–AMPER XARAKTERISTIKASINING DEFORMATSIYA TA‟SIRIDA O„ZGARIShI

Dadamirzayev, M.G., Kosimova, M.O., G‘aniyeva, A.K., Xojiakbarova, N.A.

Ilim ha’m ja’miyet · 2025-yil

Annotatsiya

This paper presents a theoretical study of the effect of mechanical deformation on the current-voltage characteristics (I-V) of GaSb-based tunnel diodes. Based on the Esaki model, deformation effects were incorporated into the tunneling current expression through the reduced effective mass. The modeling results show that, in the absence of deformation, the I-V characteristics agree well with classical theory and available experimental data. The distinct influence of compressive and tensile strain was identified, demonstrating that the parameters of tunnel diodes can be controlled by mechanical factors. This approach provides new opportunities for nanoelectronic devices.

Maqola ma’lumotlari
MualliflarDadamirzayev, M.G., Kosimova, M.O., G‘aniyeva, A.K., Xojiakbarova, N.A.
JurnalIlim ha’m ja’miyet
Nashr sanasi2025-12-26
Son8-1
Betlar5-8
Tiluz_Latn

Kalit so‘zlar

GaSb tunnel diodi, Esaki modeli, deformatsiya, volt-amper xarakteristika (VAX), effektiv massa, туннельный диод GaSb, модель Эсаки, деформация, вольт-амперная характеристика (ВАХ), эффективная масса, GaSb tunnel diode, Esaki model, deformation, current–voltage characteristic (I-V), effective mass

Ilmiy soha

Ilim ha’m ja’miyet jurnalidan boshqa maqolalar

Ilim ha’m ja’miyet — barcha maqolalar