The purpose of this research is to determine the criteria (i.e. conditions) for the existence of the localized states of hole carriers and solve the problem of metal-insulator transitions in La-based cuprates. We propose a new two-carrier cuprate superconductor model for studying two distinct metal-insulator transitions occurring simultaneously in hole-doped La-based cuprate compounds. We demonstrate that when hole carriers reside in impurity and polaron bands, these metal-insulator transitions in La-based superconductors with small-radius dopants occur accordingly in a wide doping range and relatively lower doping levels.
| Mualliflar | Жумабаева, Г.К. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2025-12-26 |
| Son | 8-1 |
| Betlar | 10-13 |
| Til | Rus |
La асосли купратлар, ковакли ташувчилар, металл/ўрта ўтказгич-диэлектрик ўтишлар, кучсиз легирланган режим, ўрта легирланган режим, ток ташувчилар концентрацияси, купраты на основе La, дырочные носители, металл/сверхпроводник-диэлектрик переходы, слаболегированный режим, сверхлегированный режим, критическая концентрация носителей, La-based cuprates, hole carriers, metal/superconductor-insulator transitions, lightly doped regime, overdoped regime, critical carrier concentration
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