In the experiment, KDB-10 single-crystal silicon was used as the starting material. For diffusion, a powder obtained by grinding a gallium phosphide crystal was used as a diffusant. After diffusion, the conduction type was n-type. The appearance of new peaks in their optical properties can be explained by the fact that in silicon the gallium and phosphorus atoms form a binary unit cell.
| Mualliflar | Зикриллаев, Н.Ф., Камалов, А.Б., Турекеев, Х.С. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2022-05-12 |
| Son | 2-1 |
| Betlar | 32-34 |
| Til | Rus |
кремний, галлий, фосфор, диффузия, рентгенограмма, silicon, gallium, phosphorus, diffusion, x-ray
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