For the study, silicon samples were obtained, diffusion doped with impurity manganese atoms with crystal orientation ˂111˃ and ˂110˃ with different resistivity of p-type conductivity. From an analysis of the research results, it was established that uniaxial elastic compression greatly changes the amplitude and frequency of recombination waves. The physical mechanism for changing the parameters of self-oscillations of current is explained by the model of the band diagram of an inhomogeneous semiconductor material, which is formed due to the charge state of impurity manganese atoms in compensated silicon.
| Mualliflar | Зикриллаев, Н.Ф., Сатторов, А.А., Норкулов, Н., Абдуллаева, Н.У., Ибрагимова, Б.С. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2024-10-29 |
| Son | 5-1 |
| Betlar | 36-38 |
| Til | Rus |
кремний, диффузия, марганец, амплитуда, частота, бир ўқли босим, барик коэффициент, электрон, ковак, кремний, диффузия, марганец, амплитуда, частота, одноосное сжатие, барический коэффициент, электрон, дырка, silicon, diffusion, manganese, amplitude, frequency, uniaxial compression, pressure coefficient, electron, hole
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