In the article, single-crystal silicon having a perfect structure with a lattice parameter of 0,54292 nm and subcrystallites with a size of 94 nm was studied and determined the formation of low-dimensional defects consisting with the participation of oxygen in silicon grown by the Czochralski method.
| Mualliflar | Maxmudov, Sh.A., Jurayeva, M.F., Jalelov, M.A., Odilova, N.J. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2024-10-29 |
| Son | 5-1 |
| Betlar | 26-27 |
| Til | uz_Latn |
monokristall, kremniy, mikronuqsonlar, kislorod konsentratsiyasi, rentgenografiya, bir xilmaslik, монокристалл, кремнии, микродефекты, концентрация кислорода, рентгенограмма, неоднородность, monocrystal, silicon, microdefects, concentration, oxygen, radiograph, heterogeneity
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