DETERMINATION OF THE CRYSTAL STRUCTURE AND INTEGRATION ZONE WIDTH OF SI NANOPHASES AND SI NANOLAYERS FORMED UNDER THE SIO2 SURFACE.

Allayarova, Gulmira, Allanazarova, Sarvinoz, Buronov, Nurlibek

Al-Farg'oniy avlodlari · 2025-yil

Annotatsiya

After bombarding the SiO2 sample with Ar+ ions and subsequent heating, Si nanophases and nanolayers were formed at different depths of the sample. If the obtained substrate had an amorphous structure, the formed nanophases and layers also had an amorphous crystalline structure, while these layers also retained the crystalline structure. By changing the ion energy to E=10–25 keV, Si nanophases and nanolayers were formed at depths of dcр=15–20 nm. When the ion dose was small, nanophases were formed, and when the dose was increased, nanolayers were formed. The thickness of the formed nanolayer was 8–10 nm.

Maqola ma’lumotlari
MualliflarAllayarova, Gulmira, Allanazarova, Sarvinoz, Buronov, Nurlibek
JurnalAl-Farg'oniy avlodlari
Nashr sanasi2025-06-03
Son2
Betlar118-121
TilRus

Kalit so‘zlar

Ключевые слова: ионная имплантация, термическое окисление, нанофаз, нанослои, наноструктуры., Key words: ion implantation, thermal oxidation, secondary electron spectroscopy, nanostructures, Kalit so‘zlar: ion implantatsiya, termik oksidlash, nanofazalar, nanoqatlamlar, nanotuzilmalar.

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