After bombarding the SiO2 sample with Ar+ ions and subsequent heating, Si nanophases and nanolayers were formed at different depths of the sample. If the obtained substrate had an amorphous structure, the formed nanophases and layers also had an amorphous crystalline structure, while these layers also retained the crystalline structure. By changing the ion energy to E=10–25 keV, Si nanophases and nanolayers were formed at depths of dcр=15–20 nm. When the ion dose was small, nanophases were formed, and when the dose was increased, nanolayers were formed. The thickness of the formed nanolayer was 8–10 nm.
| Mualliflar | Allayarova, Gulmira, Allanazarova, Sarvinoz, Buronov, Nurlibek |
|---|---|
| Jurnal | Al-Farg'oniy avlodlari |
| Nashr sanasi | 2025-06-03 |
| Son | 2 |
| Betlar | 118-121 |
| Til | Rus |
Ключевые слова: ионная имплантация, термическое окисление, нанофаз, нанослои, наноструктуры., Key words: ion implantation, thermal oxidation, secondary electron spectroscopy, nanostructures, Kalit so‘zlar: ion implantatsiya, termik oksidlash, nanofazalar, nanoqatlamlar, nanotuzilmalar.
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