One of the most important technological parameters in the gas-phase preparation of epitaxial silicon Si/Si or heterostructures of the Si-Ge/Si type is the halogenide content in semiconductor deposited from the gas phase into a vapor-gas mixture with hydrogen. The paper proposes a new method for calculating the concentration of silicon tetrachloride or any alloying halide in the composition of the vapor-gas mixture. This technique gives a much more accurate agreement with the results of direct measurements of the content of silicon tetrachloride, carried out by various methods.The use of a new calculation method allows to reduce the level of rejects in production and to increase the uniformity of the parameters of the layers being built up according to the specified thickness and resistivity both within and between batches of manufactured structures.
| Mualliflar | Абдурахманов, Б.М., Бойко, С.Р., Ашуров, Х.Б., Кучканов, Ш.К. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2021-11-04 |
| Jild | 23 |
| Son | 2 |
| Betlar | 61-66 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v23i2.242 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v23i2.242 · Maqolaning asl sahifasi
осаждение из газовой фазы, давление паров, концентрация тетрахлорида кремния, газовый поток, давление в реакторе и в испарителе, температура испарителя, однородность параметров наращиваемых слоёв., uniformity of the parameters of the layers being grown, evaporator temperature, pressure in the reactor and in the evaporator, gas flow, silicon tetrachloride concentration, vapor pressure, vapor deposition
| APA | Абдурахманов, Б.М., Бойко, С.Р., Ашуров, Х.Б., & Кучканов, Ш.К. (2021). Optimization of the processes of gas-phase production of silicon and silicon-germanium films. O‘zbekiston fizika jurnali, 23(2), 61-66. https://doi.org/10.52304/.v23i2.242 |
|---|---|
| GOST (OAK) | Абдурахманов, Б.М. va b. Optimization of the processes of gas-phase production of silicon and silicon-germanium films // O‘zbekiston fizika jurnali. – 2021. – T. 23, № 2. – P. 61-66. – DOI: 10.52304/.v23i2.242. |
| MLA | Абдурахманов, Б.М., Бойко, С.Р., Ашуров, Х.Б., and Кучканов, Ш.К. “Optimization of the processes of gas-phase production of silicon and silicon-germanium films.” O‘zbekiston fizika jurnali, 23(2), 61-66, 2021. https://doi.org/10.52304/.v23i2.242 |
| Chicago | Абдурахманов, Б.М., Бойко, С.Р., Ашуров, Х.Б., and Кучканов, Ш.К. “Optimization of the processes of gas-phase production of silicon and silicon-germanium films.” O‘zbekiston fizika jurnali, 23(2), 61-66 (2021). https://doi.org/10.52304/.v23i2.242 |
| Harvard | Абдурахманов, Б.М., Бойко, С.Р., Ашуров, Х.Б., and Кучканов, Ш.К (2021) ‘Optimization of the processes of gas-phase production of silicon and silicon-germanium films’, O‘zbekiston fizika jurnali, 23(2), 61-66. https://doi.org/10.52304/.v23i2.242 |
| BibTeX | @article{article2021,
title = {Optimization of the processes of gas-phase production of silicon and silicon-germanium films},
author = {Абдурахманов, Б.М. and Бойко, С.Р. and Ашуров, Х.Б. and Кучканов, Ш.К.},
journal = {O‘zbekiston fizika jurnali},
year = {2021},
volume = {23},
number = {2},
pages = {61-66},
doi = {10.52304/.v23i2.242},
url = {https://doi.org/10.52304/.v23i2.242}
} |
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