The temperature dependence of a resistance in solid solution Ga(1-х)MnхAs with the x=0.0156 have been presented. It was established that the temperature dependence of the resistance measured along the crystal axes [110] and [110] in the temperature range below 150 K are significantly different. It was shown that at the temperatures below the Curie temperature observed difference can be associated with the anisotropy of the magnetic properties of the Ga(1-х)MnхAs epitaxial layer, whereas at temperatures above the Curie temperature it may be related to the anisotropy of the mobility of charge carriers that occurs due to the presence of spatially oriented structures in the volume of the epitaxial layer.
| Mualliflar | Парчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, урсункулов, О.М. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-11-04 |
| Jild | 23 |
| Son | 2 |
| Betlar | 27-32 |
| Til | Rus |
| DOI | 10.52304/.v23i2.236 |
DOI: 10.52304/.v23i2.236 · Maqolaning asl sahifasi
молекулярно-лучевая эпитаксия, GaMnAs, магнетосопротивление, ферромаг нитное упорядочения, анизотропия., molecular beam epitaxy, GaMnAs, magnetoresistance, ferromagnetic state, anisotropy
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