Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy

Парчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, урсункулов, О.М.

O‘zbekiston fizika jurnali · 2021-yil

Annotatsiya

The temperature dependence of a resistance in solid solution Ga(1-х)MnхAs with the x=0.0156 have been presented. It was established that the temperature dependence of the resistance measured along the crystal axes [110] and [110] in the temperature range below 150 K are significantly different. It was shown that at the temperatures below the Curie temperature observed difference can be associated with the anisotropy of the magnetic properties of the Ga(1-х)MnхAs epitaxial layer, whereas at temperatures above the Curie temperature it may be related to the anisotropy of the mobility of charge carriers that occurs due to the presence of spatially oriented structures in the volume of the epitaxial layer.

Maqola ma’lumotlari
MualliflarПарчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, урсункулов, О.М.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2021-11-04
Jild23
Son2
Betlar27-32
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v23i2.236
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v23i2.236 · Maqolaning asl sahifasi

Kalit so‘zlar

молекулярно-лучевая эпитаксия, GaMnAs, магнетосопротивление, ферромаг нитное упорядочения, анизотропия., molecular beam epitaxy, GaMnAs, magnetoresistance, ferromagnetic state, anisotropy

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAПарчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, & урсункулов, О.М. (2021). Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy. O‘zbekiston fizika jurnali, 23(2), 27-32. https://doi.org/10.52304/.v23i2.236
GOST (OAK)Парчинский, П.Б. va b. Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy // O‘zbekiston fizika jurnali. – 2021. – T. 23, № 2. – P. 27-32. – DOI: 10.52304/.v23i2.236.
MLAПарчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, and урсункулов, О.М. “Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy.” O‘zbekiston fizika jurnali, 23(2), 27-32, 2021. https://doi.org/10.52304/.v23i2.236
ChicagoПарчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, and урсункулов, О.М. “Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy.” O‘zbekiston fizika jurnali, 23(2), 27-32 (2021). https://doi.org/10.52304/.v23i2.236
HarvardПарчинский, П.Б., Насиров, А.А., Газизулина, А.С., Арсланов, А., Kim, Dojin, and урсункулов, О.М (2021) ‘Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy’, O‘zbekiston fizika jurnali, 23(2), 27-32. https://doi.org/10.52304/.v23i2.236
BibTeX
@article{article2021,
  title = {Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by low-temperature molecular beam epitaxy},
  author = {Парчинский, П.Б. and Насиров, А.А. and Газизулина, А.С. and Арсланов, А. and Kim, Dojin and урсункулов, О.М.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2021},
  volume = {23},
  number = {2},
  pages = {27-32},
  doi = {10.52304/.v23i2.236},
  url = {https://doi.org/10.52304/.v23i2.236}
}

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