In this work, by implantation of Ni+ ions in Si in combination with annealing the nanocrystalline phases and layers of NiSi2 were obtained in near surface Si layer at the depth of 15−25 nm. At D = 8×1016 cm−3 , a nanofilm heterostructure of the Si/NiSi2/Si type was formed. For the first time, the band gap widths of nanocrystalline phases and NiSi2 layers formed in near surface region of Si have been estimated. The formation of epitaxial layers of NiSi2 during the deposition of Ni in Si with subsequent annealing has been studied using Auger electron spectroscopy, scanning electron and atomic force microscopy. It is shown that island films of NiSi2 are formed at thicknesses h<150 Å. The band gap of the islands and NSi2 films practically do not differ from each other and amounted to ~0.6 eV, and the values of ρ differ by several orders of magnitude.
| Mualliflar | Мустафоева, Н.М., Ташатов, А.К. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2021-11-04 |
| Jild | 23 |
| Son | 2 |
| Betlar | 55-60 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v23i2.241 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v23i2.241 · Maqolaning asl sahifasi
нанопленки NiSi2, структура поверхности, Оже-электронная спектроскопия, твердофазное осаждение, морфология, гетероструктура, ширина запрещенной зоны, растровая электронная и атомно-силовая микроскопии., NiSi2 nanofilms, surface structure, Auger electron spectroscopy, solid-phase deposition, morphology, heterostructure, band gap, scanning electron and atomic force microscopy
| APA | Мустафоева, Н.М., & Ташатов, А.К. (2021). Morphology, composition, and surface structure of NiSi2 / Si films obtained by solid-phase epitaxy. O‘zbekiston fizika jurnali, 23(2), 55-60. https://doi.org/10.52304/.v23i2.241 |
|---|---|
| GOST (OAK) | Мустафоева, Н.М., Ташатов, А.К. Morphology, composition, and surface structure of NiSi2 / Si films obtained by solid-phase epitaxy // O‘zbekiston fizika jurnali. – 2021. – T. 23, № 2. – P. 55-60. – DOI: 10.52304/.v23i2.241. |
| MLA | Мустафоева, Н.М., and Ташатов, А.К. “Morphology, composition, and surface structure of NiSi2 / Si films obtained by solid-phase epitaxy.” O‘zbekiston fizika jurnali, 23(2), 55-60, 2021. https://doi.org/10.52304/.v23i2.241 |
| Chicago | Мустафоева, Н.М., and Ташатов, А.К. “Morphology, composition, and surface structure of NiSi2 / Si films obtained by solid-phase epitaxy.” O‘zbekiston fizika jurnali, 23(2), 55-60 (2021). https://doi.org/10.52304/.v23i2.241 |
| Harvard | Мустафоева, Н.М., and Ташатов, А.К (2021) ‘Morphology, composition, and surface structure of NiSi2 / Si films obtained by solid-phase epitaxy’, O‘zbekiston fizika jurnali, 23(2), 55-60. https://doi.org/10.52304/.v23i2.241 |
| BibTeX | @article{article2021,
title = {Morphology, composition, and surface structure of NiSi2 / Si films obtained by solid-phase epitaxy},
author = {Мустафоева, Н.М. and Ташатов, А.К.},
journal = {O‘zbekiston fizika jurnali},
year = {2021},
volume = {23},
number = {2},
pages = {55-60},
doi = {10.52304/.v23i2.241},
url = {https://doi.org/10.52304/.v23i2.241}
} |
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