COMPARATIVE ANALYSIS OF NOT LOGIC ELEMENTS IMPLEMENTED ON MOSFET TRANSISTORS WITH THEIR ANALOGS IMPLEMENTED ON BIPOLAR TRANSISTORS

Nodira Batirdjanovna Аlimova, Nilufar Baxtiyorovna Gulyamova

Кимёвий технология. Назорат ва бошқарув · 2024-yil

Annotatsiya

This paper presents a comparative analysis of existing 'NOT' logic elements (LE) based on MOSFET transistors and their analogs using bipolar transistors. It was found that the 'NOT' LE circuit implemented with n-MOS transistors is analogous to the 'NOT' LE implemented with n-p-n bipolar transistors, i.e., integral-injection logic (I2L). The circuit of the LE"NOT" made on p-MOS transistors is an analog of the LE"NOT» made on bipolar transistors of the p-n-p structure. The methodologically significant similarity between the LE"NOT," implemented on complementary MOSFET transistors, and the LE" NOT," implemented on complementary bipolar transistors (BT), using the injection-voltaic effect and representing a special type of I2L is shown. As a result of using the injection-voltaic effect in circuit design, a new element base was created. It has been theoretically and experimentally established that the LE"NOT," implemented on complementary BTs, operates at record low supply voltages of the order of the contact potential difference.

Maqola ma’lumotlari
MualliflarNodira Batirdjanovna Аlimova, Nilufar Baxtiyorovna Gulyamova
JurnalКимёвий технология. Назорат ва бошқарув
Nashr sanasi2024-10-24
Jild2024
Son5
Betlar107-112
Tilen
DOI10.59048/2181-1105.1637

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