In this work, nanocrystalline phases and layers of NiSi2 were obtained by implantation of Ni + ions in Si in combination with annealing in the near-surface Si layer at a depth of 15-25 nm. At D = 8 ∙ 1016 cm-3, a nanofilm heterostructure of the Si/NiSi2/Si type was formed. For the first time, the band gap widths of nanocrystalline phases and NiSi2 layers formed in the near-surface region of Si have been estimated. It is shown that island films of NiSi2 are formed at thicknesses h <150 Å. The band gap of the islands and NiSi2 films practically do not differ from each other and amounted to ~ 0.6 eV, and the values of differ by several orders of magnitude
| Mualliflar | Алланазар ТАШАТОВ, Ёкуб ЭРГАШОВ, Нодира МУСТАФОЕВА |
|---|---|
| Jurnal | Ўзбекистон Миллий университети хабарлари |
| Nashr sanasi | 2024-03-29 |
| Jild | 3 |
| Son | 3.1 |
| Betlar | 508-512 |
| Til | Rus |
| DOI | 10.69617/nuuz.v3i3.1.1944 |
DOI: 10.69617/nuuz.v3i3.1.1944 · Maqolaning asl sahifasi
NiSi2 nanofilms, surface structure, Auger electron spectroscopy, solid-phase deposition, morphology, ultrahigh vacuum, heterostructure, band gap, scanning electron, atomic force microscopy., нанопленки NiSi2, структура поверхности, Оже-электронной спектроскопии, твердофазного осаждения, морфология, сверхвысокого вакуума, гетероструктура, ширина запрещенной зоны, растровой электронной, атомно-силовой микроскопии., NiSi2 nanofilmlari, sirt tuzilishi, Oje-elektron spektroskopiyasi, qattiq fazali cho‘kma, morfologiya, o‘ta yuqori vakuum, geterostruktura, tarmoqli bo‘shliq, skanerlovchi yelektron, atom kuchli mikroskopiya.
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