EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS

Амин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, Шохрух САЙФУЛЛОЕВ,

Ўзбекистон Миллий университети хабарлари · 2024-yil

Annotatsiya

The paper reports results of the study of the distribution profiles of implanted iron and cobalt atoms in silicon as a function of the radiation dose and annealing temperature that was performed by applying the Rutherford backscattering spectroscopy (RBS). The effects of thermal annealing on the distribution of iron, cobalt, and in particular oxygen were studied. The authors strongly suggest that under certain heat treatment conditions and by applying specific radiation doses, the so-called epitaxial silicides will build on the surface of a single crystal, which can play the role of conducting or metal layers. One could consider the RBS method for analysis of both the topological distribution of dopants and the interaction of impurities.

Maqola ma’lumotlari
MualliflarАмин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, Шохрух САЙФУЛЛОЕВ,
JurnalЎзбекистон Миллий университети хабарлари
Nashr sanasi2024-03-29
Jild3
Son3.1
Betlar492-497
TilRus
DOI10.69617/nuuz.v3i3.1.1918

Kalit so‘zlar

: impurities, profiles, influence, thermal annealing, implanted atoms, thin layers, depth, radiation doses., имплантация, кобальт, эпитаксиальный слой, термический отжиг, профиль распределения, доза облучения, резерфордовское обратное рассеяние, вторично-ионная масс спектроскопия., Kirishmalar, profillar, ta'sir, termik toblanish, implantatsiya qilingan atomlar, yupqa qatlamlar, chuqurlik, nurlanish dozalari.

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