Effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions

Амин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, Шохрух САЙФУЛЛОЕВ,

Ўзбекистон Миллий университети хабарлари · 2024-yil

Annotatsiya

The paper reports results of the study of the distribution profiles of implanted iron and cobalt atoms in silicon as a function of the radiation dose and annealing temperature that was performed by applying the Rutherford backscattering spectroscopy (RBS). The effects of thermal annealing on the distribution of iron, cobalt, and in particular oxygen were studied. The authors strongly suggest that under certain heat treatment conditions and by applying specific radiation doses, the so-called epitaxial silicides will build on the surface of a single crystal, which can play the role of conducting or metal layers. One could consider the RBS method for analysis of both the topological distribution of dopants and the interaction of impurities.

Maqola ma’lumotlari
MualliflarАмин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, Шохрух САЙФУЛЛОЕВ,
JurnalЎзбекистон Миллий университети хабарлари
NashriyotЎзбекистон Миллий университети
ISSN2181-7324, 3093-8996
Nashr sanasi2024-03-29
Jild3
Son3.1
Betlar492-497
TilIngliz
Ilmiy sohaKimyo
DOI10.69617/nuuz.v3i3.1.1918
Indeksga qo‘shilgan2026-08-27

DOI: 10.69617/nuuz.v3i3.1.1918 · Maqolaning asl sahifasi

Kalit so‘zlar

: impurities, profiles, influence, thermal annealing, implanted atoms, thin layers, depth, radiation doses., имплантация, кобальт, эпитаксиальный слой, термический отжиг, профиль распределения, доза облучения, резерфордовское обратное рассеяние, вторично-ионная масс спектроскопия., Kirishmalar, profillar, ta'sir, termik toblanish, implantatsiya qilingan atomlar, yupqa qatlamlar, chuqurlik, nurlanish dozalari.

Ilmiy soha

Kimyo

Iqtibos keltirish

APAАмин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, & Шохрух САЙФУЛЛОЕВ, (2024). EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. Ўзбекистон Миллий университети хабарлари, 3(3.1), 492-497. https://doi.org/10.69617/nuuz.v3i3.1.1918
GOST (OAK)Амин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, Шохрух САЙФУЛЛОЕВ, EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS // Ўзбекистон Миллий университети хабарлари. – 2024. – T. 3, № 3.1. – P. 492-497. – DOI: 10.69617/nuuz.v3i3.1.1918.
MLAАмин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, and Шохрух САЙФУЛЛОЕВ,. “EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS.” Ўзбекистон Миллий университети хабарлари, 3(3.1), 492-497, 2024. https://doi.org/10.69617/nuuz.v3i3.1.1918
ChicagoАмин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, and Шохрух САЙФУЛЛОЕВ,. “EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS.” Ўзбекистон Миллий университети хабарлари, 3(3.1), 492-497 (2024). https://doi.org/10.69617/nuuz.v3i3.1.1918
HarvardАмин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, and Шохрух САЙФУЛЛОЕВ, (2024) ‘EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS’, Ўзбекистон Миллий университети хабарлари, 3(3.1), 492-497. https://doi.org/10.69617/nuuz.v3i3.1.1918
BibTeX
@article{article2024,
  title = {EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS},
  author = {Амин МАЛЛАЕВ and Бахром ЭГАМБЕРДИЕВ and Шохрух САЙФУЛЛОЕВ,},
  journal = {Ўзбекистон Миллий университети хабарлари},
  year = {2024},
  volume = {3},
  number = {3.1},
  pages = {492-497},
  doi = {10.69617/nuuz.v3i3.1.1918},
  url = {https://doi.org/10.69617/nuuz.v3i3.1.1918}
}

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