The paper presents the results of studies of the distribution profiles of implanted iron atoms in silicon depending on the irradiation dose and annealing temperature by the RBS method. The obtained results confirm similar data obtained by SIMS. The influence of thermal annealing on the distribution of iron and other impurities, in particular oxygen, has been studied. The possibility of using the RBS method for the analysis of the concentration distribution and the interaction of impurities with each other is presented. At the same time, the crystal structure of the surface and the electrophysical properties of ion-doped layers were studied.
| Mualliflar | Bahrom EGAMBERDIEV, Amin MALLAEV, Shohruh SAYFULLOEV |
|---|---|
| Jurnal | Ўзбекистон Миллий университети хабарлари |
| Nashr sanasi | 2024-03-29 |
| Jild | 3 |
| Son | 3.1 |
| Betlar | 524-528 |
| Til | Ingliz |
| DOI | 10.69617/nuuz.v3i3.1.1947 |
DOI: 10.69617/nuuz.v3i3.1.1947 · Maqolaning asl sahifasi
impurity, iron, silicon, thermal annealing, doping depth, concentration distribution, ion implantation., : примесь, железо, кремний, термический отжиг, глубина легирования, распределение концентрации, ионная имплантация., kirishma, temir, kremniy, termik toblanish, legirlangan chuqurlik, konsentratsiyaning taqsimlanishi, ion implantatsiyasi.
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