STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES

Bahrom EGAMBERDIEV, Amin MALLAEV, Shohruh SAYFULLOEV

Ўзбекистон Миллий университети хабарлари · 2024-yil

Annotatsiya

The paper presents the results of studies of the distribution profiles of implanted iron atoms in silicon depending on the irradiation dose and annealing temperature by the RBS method. The obtained results confirm similar data obtained by SIMS. The influence of thermal annealing on the distribution of iron and other impurities, in particular oxygen, has been studied. The possibility of using the RBS method for the analysis of the concentration distribution and the interaction of impurities with each other is presented. At the same time, the crystal structure of the surface and the electrophysical properties of ion-doped layers were studied.

Maqola ma’lumotlari
MualliflarBahrom EGAMBERDIEV, Amin MALLAEV, Shohruh SAYFULLOEV
JurnalЎзбекистон Миллий университети хабарлари
Nashr sanasi2024-03-29
Jild3
Son3.1
Betlar524-528
TilIngliz
DOI10.69617/nuuz.v3i3.1.1947

Kalit so‘zlar

impurity, iron, silicon, thermal annealing, doping depth, concentration distribution, ion implantation., : примесь, железо, кремний, термический отжиг, глубина легирования, распределение концентрации, ионная имплантация., kirishma, temir, kremniy, termik toblanish, legirlangan chuqurlik, konsentratsiyaning taqsimlanishi, ion implantatsiyasi.

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