By means of nonstationary capacitance spectroscopy of deep levels the residual effects in silicon doped with impurities of T-ions and subjected to uniform compression are investigated. It is shown that the effect of compression in the range of 5−70 kbar leads to a residual change of the thermal activation energy of the levels Ec−0.22 eV and Ec−0.42 eV.
| Mualliflar | Утамурадова, Ш.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-09-21 |
| Jild | 20 |
| Son | 5 |
| Betlar | 324-326 |
| Til | Rus |
| DOI | 10.52304/.v20i5.126 |
DOI: 10.52304/.v20i5.126 · Maqolaning asl sahifasi
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