INFLUENCE OF THERMAL TREATMENT ON THE ELECTROPHYSICAL PROPERTIES OF SILICON STRUCTURES WITH RARE-EARTH ELEMENTS

Yusupov, Oralbay Naurizbaevich, Юсупов, Оралбай Наурызбаевич, Yusupov, Oralbay Naurizbaevich

Ilim ha’m ja’miyet · 2026-yil

Annotatsiya

The article to study the mechanisms of electrophysical processes, deep level formation, and interaction with technological impurities (oxygen and carbon) occurring during high-temperature heat treatment in silicon monocrystals doped with rare earth elements such as samarium, gadolinium, and itterbium. Samples grown by the Chohralski method and doped by diffusion were studied using neutron activation analysis, IR spectroscopy, isothermal capacitance relaxation, and four-probe methods.

Maqola ma’lumotlari
MualliflarYusupov, Oralbay Naurizbaevich, Юсупов, Оралбай Наурызбаевич, Yusupov, Oralbay Naurizbaevich
JurnalIlim ha’m ja’miyet
Nashr sanasi2026-06-30
Son4-1
Betlar52-55
Tiluz_Latn

Kalit so‘zlar

yarimo‘tkazgich, kremniy, n-Si, termik ta’sirlar effekti, elektrofizik xossalari, kremniyni o‘stirish jarayonida Sm, Gd va Yb bilan legirlash, kremniyga termik ishlov berish, полупроводник, кремний, n-Si, эффекты термических воздействий, электрофизические свойства, легирование кремния Sm, Gd и Yb при выращивании, термическая обработка кремния, semiconductor, silicon, n-type silicon, the influence of thermal effects, electrophysical properties, structures with Sm, Gd, and Yb during growth, silicon during heat treatments

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