A large negative magnetoresistance phenomenon has been observed at room temperature by forming magnetic nanoclusters of manganese doped atoms in silicon by low-temperature diffusion. It has been shown that the negative magnetoresistance value can be controlled by controlling the concentration of manganese nanoclusters in silicon.
| Mualliflar | Madjitov, M.X. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2023-05-30 |
| Son | 2-1 |
| Betlar | 19-20 |
| Til | uz_Latn |
kremniy, magnit yarimo‘tkazgich, marganets nanoklasterlar, magnit qarshilik, кремний, магнитный полупроводник, нанокластеры марганца, магнитное сопротивление, silicon, magnetic semiconductor, manganese nanoclusters, magnetic resistance
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