A large negative magnetoresistance phenomenon has been observed at room temperature by forming magnetic nanoclusters of manganese doped atoms in silicon by low-temperature diffusion. It has been shown that the negative magnetoresistance value can be controlled by controlling the concentration of manganese nanoclusters in silicon.
| Mualliflar | Маджитов, М.Х. |
|---|---|
| Jurnal | Инновацион технологиялар |
| Nashr sanasi | 2022-11-27 |
| Jild | 47 |
| Betlar | 42-45 |
| Til | Ingliz |
silicon, magnetic semiconductor, manganese nanoclusters, magnetic resistance
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