МАГНИТНЫЕ СВОЙСТВА ЛЕГИРОВАННОГО МАРГАНЦЕМ КРЕМНИЯ

Маджитов, М.Х.

Инновацион технологиялар · 2022-yil

Annotatsiya

A large negative magnetoresistance phenomenon has been observed at room temperature by forming magnetic nanoclusters of manganese doped atoms in silicon by low-temperature diffusion. It has been shown that the negative magnetoresistance value can be controlled by controlling the concentration of manganese nanoclusters in silicon.

Maqola ma’lumotlari
MualliflarМаджитов, М.Х.
JurnalИнновацион технологиялар
Nashr sanasi2022-11-27
Jild47
Betlar42-45
TilIngliz

Kalit so‘zlar

silicon, magnetic semiconductor, manganese nanoclusters, magnetic resistance

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