Influence of deep impurity on photosensitivity of CdTe-SiO₂-Si heterostructure

Отажонов, Салим, Yunusov, Nurzod, Abdullayev, Sherzod, Boqirov, Javohir

FarDU ilmiy xabarlari · 2025-yil

Annotatsiya

In this work, the influence of deep impurity levels on the photosensitivity of CdTe-SiO₂-Si heterostructures synthesized by thermal evaporation and subsequent annealing is considered. The presence and energy position of deep level defects in the CdTe layer were determined by temperature-dependent photoresponse and deep level transient spectroscopy. Our results show that the inclusion of deep impurity levels significantly changes the dynamics of photocarrier generation and recombination, leading to an increase in photosensitivity under sub-band illumination. In addition, a correlation between the type and concentration of deep level states and the spectral dependence of the photoresponse is shown. The results obtained are of great importance for the optimization of CdTe-based heterostructures in optoelectronic applications, including infrared photodetectors and solar cells.

Maqola ma’lumotlari
MualliflarОтажонов, Салим, Yunusov, Nurzod, Abdullayev, Sherzod, Boqirov, Javohir
JurnalFarDU ilmiy xabarlari
NashriyotFarg‘ona davlat universiteti
ISSN2010-8419, 2181-1571
Nashr sanasi2025-12-31
Jild31
Son3
Betlar160-160
TilIngliz
Ilmiy sohaKimyo
Indeksga qo‘shilgan2026-09-06

Maqolaning asl sahifasi

Kalit so‘zlar

CdTe heterostructures; deep levels; photosensitivity; impurity states; SiO₂; spectroscopy; photodetectors., CdTe heterostructures; deep levels; photosensitivity; impurity states; SiO₂; spectroscopy; photodetectors.

Ilmiy soha

Kimyo

Iqtibos keltirish

APAОтажонов, Салим, Yunusov, Nurzod, Abdullayev, Sherzod, & Boqirov, Javohir (2025). INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE. FarDU ilmiy xabarlari, 31(3), 160-160. https://journal.fdu.uz/main/article/1098
GOST (OAK)Отажонов, Салим va b. INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE // FarDU ilmiy xabarlari. – 2025. – T. 31, № 3. – P. 160-160.
MLAОтажонов, Салим, Yunusov, Nurzod, Abdullayev, Sherzod, and Boqirov, Javohir. “INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE.” FarDU ilmiy xabarlari, 31(3), 160-160, 2025. https://journal.fdu.uz/main/article/1098
ChicagoОтажонов, Салим, Yunusov, Nurzod, Abdullayev, Sherzod, and Boqirov, Javohir. “INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE.” FarDU ilmiy xabarlari, 31(3), 160-160 (2025). https://journal.fdu.uz/main/article/1098
HarvardОтажонов, Салим, Yunusov, Nurzod, Abdullayev, Sherzod, and Boqirov, Javohir (2025) ‘INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE’, FarDU ilmiy xabarlari, 31(3), 160-160. https://journal.fdu.uz/main/article/1098
BibTeX
@article{article2025,
  title = {INFLUENCE OF DEEP IMPURITY ON PHOTOSENSITIVITY OF CdTe-SiO₂-Si HETEROSTRUCTURE},
  author = {Отажонов, Салим and Yunusov, Nurzod and Abdullayev, Sherzod and Boqirov, Javohir},
  journal = {FarDU ilmiy xabarlari},
  year = {2025},
  volume = {31},
  number = {3},
  pages = {160-160},
  url = {https://journal.fdu.uz/main/article/1098}
}

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