This study presents a comprehensive simulation analysis of germanium (Ge) diffusion into silicon (Si) substrates with a resistivity of 100 Ω·cm (n-type) in the temperature range of 800–1200 °C using the Synopsys Sentaurus TCAD process simulation tools. The diffusion process was modeled using the complementary error function solution of Fick’s second law, employing Arrhenius parameters obtained from the literature (D0 = 7.55×10³ cm²/s, Eₐ = 5.08 eV).
| Mualliflar | Matyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, Ismailova, Shaxnoza Rustamovna |
|---|---|
| Jurnal | Al-Farg'oniy avlodlari |
| Nashriyot | ТАТУ Фарғона филиали |
| ISSN | 2181-4252 |
| Nashr sanasi | 2026-03-26 |
| Son | 1 |
| Betlar | 342-349 |
| Til | Ingliz |
| Ilmiy soha | Texnika |
| Indeksga qo‘shilgan | 2026-08-26 |
Диффузия германия, Кремний, TCAD моделирование, Sentaurus, Коэффициент диффузии, Уравнение Аррениуса, Тепловой бюджет, Полупроводниковые технологии., Germaniy diffuziyasi, Kremniy, TCAD simulyatsiyasi, Sentaurus, Diffuziya koeffitsienti, Arrhenius tenglamasi, Issiqlik byudjeti, Yarim o‘tkazgichlar qayta ishlash., Germanium diffusion, Silicon, TCAD simulation, Centaurus, Diffusion coefficient, Arrhenius equation, Heat budget, Semiconductor processing
| APA | Matyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, & Ismailova, Shaxnoza Rustamovna (2026). INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C).. Al-Farg'oniy avlodlari, (1), 342-349. https://al-fargoniy.uz/index.php/journal/article/view/1088 |
|---|---|
| GOST (OAK) | Matyakubov, Davlatbek va b. INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C). // Al-Farg'oniy avlodlari. – 2026. – № 1. – P. 342-349. |
| MLA | Matyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, and Ismailova, Shaxnoza Rustamovna. “INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C)..” Al-Farg'oniy avlodlari, (1), 342-349, 2026. https://al-fargoniy.uz/index.php/journal/article/view/1088 |
| Chicago | Matyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, and Ismailova, Shaxnoza Rustamovna. “INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C)..” Al-Farg'oniy avlodlari, (1), 342-349 (2026). https://al-fargoniy.uz/index.php/journal/article/view/1088 |
| Harvard | Matyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, and Ismailova, Shaxnoza Rustamovna (2026) ‘INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C).’, Al-Farg'oniy avlodlari, (1), 342-349. https://al-fargoniy.uz/index.php/journal/article/view/1088 |
| BibTeX | @article{matyakubovdavlatbek2026,
title = {INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C).},
author = {Matyakubov, Davlatbek and Abduraxmanov, Baxromjon Abdukaxxarovich and Kushiyev, G‘iyosiddin Abdivahob oʻgʻli and Ismailova, Shaxnoza Rustamovna},
journal = {Al-Farg'oniy avlodlari},
year = {2026},
number = {1},
pages = {342-349},
url = {https://al-fargoniy.uz/index.php/journal/article/view/1088}
} |
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