INVESTIGATION OF GERMANIUM DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES (800–1200 °C).

Matyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, Ismailova, Shaxnoza Rustamovna

Al-Farg'oniy avlodlari · 2026-yil

Annotatsiya

This study presents a comprehensive simulation analysis of germanium (Ge) diffusion into silicon (Si) substrates with a resistivity of 100 Ω·cm (n-type) in the temperature range of 800–1200 °C using the Synopsys Sentaurus TCAD process simulation tools. The diffusion process was modeled using the complementary error function solution of Fick’s second law, employing Arrhenius parameters obtained from the literature (D0 = 7.55×10³ cm²/s, Eₐ = 5.08 eV).    

Maqola ma’lumotlari
MualliflarMatyakubov, Davlatbek, Abduraxmanov, Baxromjon Abdukaxxarovich, Kushiyev, G‘iyosiddin Abdivahob oʻgʻli, Ismailova, Shaxnoza Rustamovna
JurnalAl-Farg'oniy avlodlari
Nashr sanasi2026-03-26
Son1
Betlar342-349
TilRus

Kalit so‘zlar

Диффузия германия, Кремний, TCAD моделирование, Sentaurus, Коэффициент диффузии, Уравнение Аррениуса, Тепловой бюджет, Полупроводниковые технологии., Germaniy diffuziyasi, Kremniy, TCAD simulyatsiyasi, Sentaurus, Diffuziya koeffitsienti, Arrhenius tenglamasi, Issiqlik byudjeti, Yarim o‘tkazgichlar qayta ishlash., Germanium diffusion, Silicon, TCAD simulation, Centaurus, Diffusion coefficient, Arrhenius equation, Heat budget, Semiconductor processing

Ilmiy soha

Al-Farg'oniy avlodlari jurnalidan boshqa maqolalar

Al-Farg'oniy avlodlari — barcha maqolalar