Resistive switching effect in co-doped zno thin films for nonvolatile memory applications

SHARIPOVA, Ra’no, MURODOV, Jamoliddin, YULDASHEV, Shavkat, ARSLONOV, Azamat, XUDOYQULOV, Javohir

Ўзбекистон Миллий университети хабарлари · 2026-yil

Annotatsiya

Resistive switching phenomena have attracted considerable attention because of their potential application in the nextgeneration of nonvolatile memory. In this circumstance, resistive-change random access memory (RRAM) has got extensiveinterests due to its high response speed, high scalability, multibit storage potential and simple structure. Co-doped ZnO isdiluted magnetic semiconductor and is would be of great interesting to realize the resistive switching property.In this work, we have studied the cobalt doped ZnO thin films based RRAM structure which exhibit reproducible bipolarresistive switching behavior. The cobalt doped ZnO films were deposited on the heavily doped n-type silicon (100) substratesby ultrasonic spray pyrolysis method. The values of both a high resistance state ( HRS) and a low resistance state (LRS)have little fluctuation during the cycling test, indicating the excellent switching stability. The resistance ratios of HRS to LRSare in the range of 2-3 orders of magnitude within the 80cycles of test. To sum up, steady and reversible bistable resistiveswitching behavior in Au/Co:ZnO/n+-Si device provides the possibilities for nonvolatile memory applications.

Maqola ma’lumotlari
MualliflarSHARIPOVA, Ra’no, MURODOV, Jamoliddin, YULDASHEV, Shavkat, ARSLONOV, Azamat, XUDOYQULOV, Javohir
JurnalЎзбекистон Миллий университети хабарлари
NashriyotЎзбекистон Миллий университети
ISSN2181-7324, 3093-8996
Nashr sanasi2026-10-12
Jild3
Son3.2.1
Betlar573-576
TilIngliz
Indeksga qo‘shilgan2026-10-13

Maqolaning asl sahifasi

Kalit so‘zlar

ZnO doped by cobalt, Resistive switching, ZnO, легированный кобальтом, резистивное переключение., kobalt bilan legirlangan ZnO,Qarshilikli qayta ulanish.

Iqtibos keltirish

APASHARIPOVA, Ra’no, MURODOV, Jamoliddin, YULDASHEV, Shavkat, ARSLONOV, Azamat, & XUDOYQULOV, Javohir (2026). RESISTIVE SWITCHING EFFECT IN CO-DOPED ZNO THIN FILMS FOR NONVOLATILE MEMORY APPLICATIONS. Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 573-576. https://journals.nuu.uz/index.php/actanuuz/article/view/15396
GOST (OAK)SHARIPOVA, Ra’no va b. RESISTIVE SWITCHING EFFECT IN CO-DOPED ZNO THIN FILMS FOR NONVOLATILE MEMORY APPLICATIONS // Ўзбекистон Миллий университети хабарлари. – 2026. – T. 3, № 3.2.1. – P. 573-576.
MLASHARIPOVA, Ra’no, MURODOV, Jamoliddin, YULDASHEV, Shavkat, ARSLONOV, Azamat, and XUDOYQULOV, Javohir. “RESISTIVE SWITCHING EFFECT IN CO-DOPED ZNO THIN FILMS FOR NONVOLATILE MEMORY APPLICATIONS.” Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 573-576, 2026. https://journals.nuu.uz/index.php/actanuuz/article/view/15396
ChicagoSHARIPOVA, Ra’no, MURODOV, Jamoliddin, YULDASHEV, Shavkat, ARSLONOV, Azamat, and XUDOYQULOV, Javohir. “RESISTIVE SWITCHING EFFECT IN CO-DOPED ZNO THIN FILMS FOR NONVOLATILE MEMORY APPLICATIONS.” Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 573-576 (2026). https://journals.nuu.uz/index.php/actanuuz/article/view/15396
HarvardSHARIPOVA, Ra’no, MURODOV, Jamoliddin, YULDASHEV, Shavkat, ARSLONOV, Azamat, and XUDOYQULOV, Javohir (2026) ‘RESISTIVE SWITCHING EFFECT IN CO-DOPED ZNO THIN FILMS FOR NONVOLATILE MEMORY APPLICATIONS’, Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 573-576. https://journals.nuu.uz/index.php/actanuuz/article/view/15396
BibTeX
@article{sharipovarano2026,
  title = {RESISTIVE SWITCHING EFFECT IN CO-DOPED ZNO THIN FILMS FOR NONVOLATILE MEMORY APPLICATIONS},
  author = {SHARIPOVA, Ra’no and MURODOV, Jamoliddin and YULDASHEV, Shavkat and ARSLONOV, Azamat and XUDOYQULOV, Javohir},
  journal = {Ўзбекистон Миллий университети хабарлари},
  year = {2026},
  volume = {3},
  number = {3.2.1},
  pages = {573-576},
  url = {https://journals.nuu.uz/index.php/actanuuz/article/view/15396}
}

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