This article examines the physical properties of the surface of the CdS/Si(p) material. The dependence of the density ofsurface states of the p-type Si(p) semiconductor on the magnetic field is applied. For the first time, a mathematical model hasbeen developed that determines the influence of temperature and magnetic field on the density of surface states of asemiconductor.
| Mualliflar | ERKABOYEV, Ulug‘bek, DADAMIRZAYEV, Muzaffar |
|---|---|
| Jurnal | Ўзбекистон Миллий университети хабарлари |
| Nashriyot | Ўзбекистон Миллий университети |
| ISSN | 2181-7324, 3093-8996 |
| Nashr sanasi | 2026-10-12 |
| Jild | 3 |
| Son | 3.2.1 |
| Betlar | 582-586 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| Indeksga qo‘shilgan | 2026-10-13 |
heterostructure, photoelectric converter, deep levels, capacitance-voltage characteristics, surface states, magnetic field., гетероструктура, фотоэлектрический преобразователь, глубокие уровни, вольт-фарадные характеристики, поверхностные состояния, магнитное поле., geterostruktura, fotoelektrik o‘zgartirgich, chuqur sathlar, sig‘im-kuchlanish xususiyatlari, sirt holatlari, magnit maydon
| APA | ERKABOYEV, Ulug‘bek, & DADAMIRZAYEV, Muzaffar (2026). MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD. Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 582-586. https://journals.nuu.uz/index.php/actanuuz/article/view/15389 |
|---|---|
| GOST (OAK) | ERKABOYEV, Ulug‘bek, DADAMIRZAYEV, Muzaffar MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD // Ўзбекистон Миллий университети хабарлари. – 2026. – T. 3, № 3.2.1. – P. 582-586. |
| MLA | ERKABOYEV, Ulug‘bek, and DADAMIRZAYEV, Muzaffar. “MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD.” Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 582-586, 2026. https://journals.nuu.uz/index.php/actanuuz/article/view/15389 |
| Chicago | ERKABOYEV, Ulug‘bek, and DADAMIRZAYEV, Muzaffar. “MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD.” Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 582-586 (2026). https://journals.nuu.uz/index.php/actanuuz/article/view/15389 |
| Harvard | ERKABOYEV, Ulug‘bek, and DADAMIRZAYEV, Muzaffar (2026) ‘MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD’, Ўзбекистон Миллий университети хабарлари, 3(3.2.1), 582-586. https://journals.nuu.uz/index.php/actanuuz/article/view/15389 |
| BibTeX | @article{erkaboyevulugbek2026,
title = {MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD},
author = {ERKABOYEV, Ulug‘bek and DADAMIRZAYEV, Muzaffar},
journal = {Ўзбекистон Миллий университети хабарлари},
year = {2026},
volume = {3},
number = {3.2.1},
pages = {582-586},
url = {https://journals.nuu.uz/index.php/actanuuz/article/view/15389}
} |
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