Investigation of silicon diffusionly alloyed with zinc and selenium atoms

SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, Н. Зикриллаев

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS

Maqola ma’lumotlari
MualliflarSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, Н. Зикриллаев
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-12-30
Jild3
Son6
Betlar20-25
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-6-5
Indeksga qo‘shilgan2026-09-02

Ilmiy soha

Iqtibos keltirish

APASRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, & Н. Зикриллаев (2021). INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 20-25. https://doi.org/10.37681/2181-1652-019-x-2021-6-5
GOST (OAK)SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, Н. Зикриллаев INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 6. – P. 20-25. – DOI: 10.37681/2181-1652-019-x-2021-6-5.
MLASRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, and Н. Зикриллаев. “INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 20-25, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-6-5
ChicagoSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, and Н. Зикриллаев. “INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 20-25 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-6-5
HarvardSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О. Турсунов, and Н. Зикриллаев (2021) ‘INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 20-25. https://doi.org/10.37681/2181-1652-019-x-2021-6-5
BibTeX
@article{sriofphysicsofsemiconductorsandmicroelectronicsatnuuznamedaftermirzoulugbek2021,
  title = {INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS},
  author = {SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK and О. Турсунов and Н. Зикриллаев},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {6},
  pages = {20-25},
  doi = {10.37681/2181-1652-019-x-2021-6-5},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-6-5}
}

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