Research of logic elements based on complementary bipolar transistors

Nodira Batirdjanovna Alimova, Nilufar Baxtiyorovna Gulyamova

Кимёвий технология. Назорат ва бошқарув · 2026-yil

Annotatsiya

Important parameters for any type of inverter – a NOT logic gate – are the power consumption during switching and the supply voltage. The proposed connection of complementary (two different types) bipolar transistors reduces the current consumption and supply voltage by simultaneously using the cutoff and saturation modes of the bipolar transistors. It has been theoretically and experimentally established that an inverter using complementary bipolar transistors operates at low supply voltages, approximately 0.7 V. Power consumption is virtually independent of the inverter's static state. A method for calculating the transfer characteristic of an inverter using complementary bipolar transistors is developed, and experimental results are presented. This article explores the possibility of using the injection-voltaic operating mode of a bipolar transistor to create basic digital circuits such as NOT, OR-NOT, AND-NOT, and others. Furthermore, the inverter can find wide applications in telemetry systems, automation, industrial and automotive electronics, which can be powered by solar cells.

Maqola ma’lumotlari
MualliflarNodira Batirdjanovna Alimova, Nilufar Baxtiyorovna Gulyamova
JurnalКимёвий технология. Назорат ва бошқарув
NashriyotТошкент давлат техника университети, «Ўзқурилишматериаллар» ДАК, «Ўзкимёсаноат» ДАК, «Совпластитал» ҚҚ, Ўзбекистон Интеллектуал мулк агентлиги
ISSN2181-1105, 1815-4840
Nashr sanasi2026-03-03
Jild2026
Son1
Betlar42-48
TilIngliz
DOI10.59048/2181-1105.1736
Indeksga qo‘shilgan2026-09-02

DOI: 10.59048/2181-1105.1736 · Maqolaning asl sahifasi · PDF

Iqtibos keltirish

APANodira Batirdjanovna Alimova, & Nilufar Baxtiyorovna Gulyamova (2026). RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS. Кимёвий технология. Назорат ва бошқарув, 2026(1), 42-48. https://doi.org/10.59048/2181-1105.1736
GOST (OAK)Nodira Batirdjanovna Alimova, Nilufar Baxtiyorovna Gulyamova RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS // Кимёвий технология. Назорат ва бошқарув. – 2026. – T. 2026, № 1. – P. 42-48. – DOI: 10.59048/2181-1105.1736.
MLANodira Batirdjanovna Alimova, and Nilufar Baxtiyorovna Gulyamova. “RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS.” Кимёвий технология. Назорат ва бошқарув, 2026(1), 42-48, 2026. https://doi.org/10.59048/2181-1105.1736
ChicagoNodira Batirdjanovna Alimova, and Nilufar Baxtiyorovna Gulyamova. “RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS.” Кимёвий технология. Назорат ва бошқарув, 2026(1), 42-48 (2026). https://doi.org/10.59048/2181-1105.1736
HarvardNodira Batirdjanovna Alimova, and Nilufar Baxtiyorovna Gulyamova (2026) ‘RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS’, Кимёвий технология. Назорат ва бошқарув, 2026(1), 42-48. https://doi.org/10.59048/2181-1105.1736
BibTeX
@article{nodirabatirdjanovnaalimova2026,
  title = {RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS},
  author = {Nodira Batirdjanovna Alimova and Nilufar Baxtiyorovna Gulyamova},
  journal = {Кимёвий технология. Назорат ва бошқарув},
  year = {2026},
  volume = {2026},
  number = {1},
  pages = {42-48},
  doi = {10.59048/2181-1105.1736},
  url = {https://doi.org/10.59048/2181-1105.1736}
}

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