The growth of multilayer structures with Ge0.3Si0.7-yGey/Si heterojunction at tin content from 0 to 18% was studied. The X-ray diffractometry method shows the presence of strict periodicity of layers and a high level of tin content. It has been established that GeSiSn compounds are thermally stable in the annealing temperature range of 300-550 °C. A photoluminescence signal in the infrared range of about 3 microns is observed from a structure with pseudomorphic GeSiSn layers.
| Mualliflar | Nikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., Komkov, O.S. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-12-27 |
| Jild | 23 |
| Son | 3 |
| Betlar | 1-6 |
| Til | Ingliz |
| DOI | 10.52304/.v23i3.255 |
DOI: 10.52304/.v23i3.255 · Maqolaning asl sahifasi
молекулярно-пучковая эпитаксия, Ge, Si, Sn, квантовые ямы, molecular beam epitaxy, Ge, Si, Sn, quantum well.
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