Material based on multilayer periodic structures with GeSiSn pseudomorphic layers

Nikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., Komkov, O.S.

O‘zbekiston fizika jurnali · 2021-yil

Annotatsiya

The growth of multilayer structures with Ge0.3Si0.7-yGey/Si heterojunction at tin content from 0 to 18% was studied. The X-ray diffractometry method shows the presence of strict periodicity of layers and a high level of tin content. It has been established that GeSiSn compounds are thermally stable in the annealing temperature range of 300-550 °C. A photoluminescence signal in the infrared range of about 3 microns is observed from a structure with pseudomorphic GeSiSn layers.

Maqola ma’lumotlari
MualliflarNikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., Komkov, O.S.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2021-12-27
Jild23
Son3
Betlar1-6
TilIngliz
DOI10.52304/.v23i3.255

Kalit so‘zlar

молекулярно-пучковая эпитаксия, Ge, Si, Sn, квантовые ямы, molecular beam epitaxy, Ge, Si, Sn, quantum well.

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