Material based on multilayer periodic structures with GeSiSn pseudomorphic layers

Nikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., Komkov, O.S.

O‘zbekiston fizika jurnali · 2021-yil

Annotatsiya

The growth of multilayer structures with Ge0.3Si0.7-yGey/Si heterojunction at tin content from 0 to 18% was studied. The X-ray diffractometry method shows the presence of strict periodicity of layers and a high level of tin content. It has been established that GeSiSn compounds are thermally stable in the annealing temperature range of 300-550 °C. A photoluminescence signal in the infrared range of about 3 microns is observed from a structure with pseudomorphic GeSiSn layers.

Maqola ma’lumotlari
MualliflarNikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., Komkov, O.S.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2021-12-27
Jild23
Son3
Betlar1-6
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v23i3.255
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v23i3.255 · Maqolaning asl sahifasi

Kalit so‘zlar

молекулярно-пучковая эпитаксия, Ge, Si, Sn, квантовые ямы, molecular beam epitaxy, Ge, Si, Sn, quantum well.

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APANikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., & Komkov, O.S. (2021). Material based on multilayer periodic structures with GeSiSn pseudomorphic layers. O‘zbekiston fizika jurnali, 23(3), 1-6. https://doi.org/10.52304/.v23i3.255
GOST (OAK)Nikiforov, A.I. va b. Material based on multilayer periodic structures with GeSiSn pseudomorphic layers // O‘zbekiston fizika jurnali. – 2021. – T. 23, № 3. – P. 1-6. – DOI: 10.52304/.v23i3.255.
MLANikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., and Komkov, O.S. “Material based on multilayer periodic structures with GeSiSn pseudomorphic layers.” O‘zbekiston fizika jurnali, 23(3), 1-6, 2021. https://doi.org/10.52304/.v23i3.255
ChicagoNikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., and Komkov, O.S. “Material based on multilayer periodic structures with GeSiSn pseudomorphic layers.” O‘zbekiston fizika jurnali, 23(3), 1-6 (2021). https://doi.org/10.52304/.v23i3.255
HarvardNikiforov, A.I., Timofeev , V.A., Mashanov, V.I., Loshkarev, I.D., Skvortsov, I.V., Gulyaev, D.V., Firsov, D.D., and Komkov, O.S (2021) ‘Material based on multilayer periodic structures with GeSiSn pseudomorphic layers’, O‘zbekiston fizika jurnali, 23(3), 1-6. https://doi.org/10.52304/.v23i3.255
BibTeX
@article{nikiforovai2021,
  title = {Material based on multilayer periodic structures with GeSiSn pseudomorphic layers},
  author = {Nikiforov, A.I. and Timofeev , V.A. and Mashanov, V.I. and Loshkarev, I.D. and Skvortsov, I.V. and Gulyaev, D.V. and Firsov, D.D. and Komkov, O.S.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2021},
  volume = {23},
  number = {3},
  pages = {1-6},
  doi = {10.52304/.v23i3.255},
  url = {https://doi.org/10.52304/.v23i3.255}
}

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