Pseudomorphic GeSiSn layers in strained heterostructures

Nikiforov, A.I., Timofeev, V.A., Yakimov, A.I., Mashanov, V.I., Loshkarev, I.D., Gutakovskii, A.K., Pchelyakov, O.P., Ashurov, Kh.B.

O‘zbekiston fizika jurnali · 2018-yil

Annotatsiya

The formation of pseudomorphous GeSiSn layers directly on Si have been investigated. The transition from two-dimensional growth regime to three-dimensional of the GeSiSn film on Si(100) was studied for different mismatch with silicon and growth temperatures. A possibility of synthesis of multilayer structures by molecular beam epitaxy was shown. The crystal lattice constants were determined using the high-resolution transmission electron microscopy and X-ray diffractometry. The p-i-n-diodes based on multilayer GeSiSn/Si structures were created which demonstrated the photoresponse increasing by several orders of magnitude in comparison the Sn-free structures at an increase in the Sn content. Nanostructures based on GeSiSn layers have demonstrated the photoluminescence at 0.6−0.85 eV.

Maqola ma’lumotlari
MualliflarNikiforov, A.I., Timofeev, V.A., Yakimov, A.I., Mashanov, V.I., Loshkarev, I.D., Gutakovskii, A.K., Pchelyakov, O.P., Ashurov, Kh.B.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2018-07-21
Jild20
Son4
Betlar218-223
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v20i4.95
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v20i4.95 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APANikiforov, A.I., Timofeev, V.A., Yakimov, A.I., Mashanov, V.I., Loshkarev, I.D., Gutakovskii, A.K., Pchelyakov, O.P., & Ashurov, Kh.B. (2018). PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES. O‘zbekiston fizika jurnali, 20(4), 218-223. https://doi.org/10.52304/.v20i4.95
GOST (OAK)Nikiforov, A.I. va b. PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 4. – P. 218-223. – DOI: 10.52304/.v20i4.95.
MLANikiforov, A.I., Timofeev, V.A., Yakimov, A.I., Mashanov, V.I., Loshkarev, I.D., Gutakovskii, A.K., Pchelyakov, O.P., and Ashurov, Kh.B. “PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES.” O‘zbekiston fizika jurnali, 20(4), 218-223, 2018. https://doi.org/10.52304/.v20i4.95
ChicagoNikiforov, A.I., Timofeev, V.A., Yakimov, A.I., Mashanov, V.I., Loshkarev, I.D., Gutakovskii, A.K., Pchelyakov, O.P., and Ashurov, Kh.B. “PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES.” O‘zbekiston fizika jurnali, 20(4), 218-223 (2018). https://doi.org/10.52304/.v20i4.95
HarvardNikiforov, A.I., Timofeev, V.A., Yakimov, A.I., Mashanov, V.I., Loshkarev, I.D., Gutakovskii, A.K., Pchelyakov, O.P., and Ashurov, Kh.B (2018) ‘PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES’, O‘zbekiston fizika jurnali, 20(4), 218-223. https://doi.org/10.52304/.v20i4.95
BibTeX
@article{nikiforovai2018,
  title = {PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES},
  author = {Nikiforov, A.I. and Timofeev, V.A. and Yakimov, A.I. and Mashanov, V.I. and Loshkarev, I.D. and Gutakovskii, A.K. and Pchelyakov, O.P. and Ashurov, Kh.B.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2018},
  volume = {20},
  number = {4},
  pages = {218-223},
  doi = {10.52304/.v20i4.95},
  url = {https://doi.org/10.52304/.v20i4.95}
}

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