In this work, the electrical parameters and characteristics of the ultrahigh frequency detector diodes Au-TiBx(ZrBx)-n-SiC 6H are presented. The possibility of using these diodes as power sensors for applications in a wide range of capacities (including power up to 1 W) has been studied.
| Mualliflar | Абдижалиев, С.К. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2025-02-14 |
| Son | 1-1 |
| Betlar | 4-7 |
| Til | Rus |
Шотки тўсиғи, қувват сенсори, кремний карбиди, детектор диодлари, барьер Шоттки, датчик мощности, карбид кремния, детекторные диоды, Schottky barrier, power sensor, silicon carbide, detector diodes
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