KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI

Mavlonov, G‘.X., Isamov, S.B., Kenjayev, Z.T.

Ilim ha’m ja’miyet · 2022-yil

Annotatsiya

In this work investigated and studied 3 groups of of diffusion samples in silicon, separately phosphorus and boron, sequential diffusion of phosphorus and boron. The aim of this study is to study the interaction and distribution of phosphorus and boron diffusion of silicon. As a result, it was found that when boron diffuses into silicon with a high phosphorus concentration, the atoms of electroactive boron compensate 2,5-3 times more phosphorus atoms and change the type of material conductivity.

Maqola ma’lumotlari
MualliflarMavlonov, G‘.X., Isamov, S.B., Kenjayev, Z.T.
JurnalIlim ha’m ja’miyet
Nashr sanasi2022-03-01
Son1-1
Betlar23-24
Tiluz_Latn

Kalit so‘zlar

kremniy, fosfor, bor, diffuziya, legirlash, elektron, kovak, кремний, фосфор, бор, диффузия, легирование, электрон, дырка, silicon, phosphorus, boron, diffusion, alloying, electron, hole

Ilmiy soha

Ilim ha’m ja’miyet jurnalidan boshqa maqolalar

Ilim ha’m ja’miyet — barcha maqolalar