CHARACTERIZATION OF PHOTOLUMINESCENCE SPECTRUM OF CHALCOGENIDE CADMIUM-BASED SEMICONDUCTOR POLYCRYSTALLINE FILMS

Polvonov, Baxtiyor, Khudoyberdieva, Muxayyoxon, Abdubannabov, Mo‘ydinjon, Ergasheva, Gulruxsor, Tohirjonova, Zahro, Mamasodiqov, Shohjahon

Al-Farg'oniy avlodlari · 2024-yil

Annotatsiya

In the spectrum of low temperature photoluminescence of the fine-grained thin films is discovered a band of the own radiation, specified by the subsurface potential barriers on border of crystalline grains and marginal double-acting band, appearing as phonons repetitions of the band. The alloyage of the film by impurity leads to stewing double-acting band, but its further thermal processing to activation of the own band, short-wave offset of the red border and modulation of the full width on half maximum which is correlated with by the height of the micro potential barriers and temperature of recombined hot photocurrents.

Maqola ma’lumotlari
MualliflarPolvonov, Baxtiyor, Khudoyberdieva, Muxayyoxon, Abdubannabov, Mo‘ydinjon, Ergasheva, Gulruxsor, Tohirjonova, Zahro, Mamasodiqov, Shohjahon
JurnalAl-Farg'oniy avlodlari
Nashr sanasi2024-12-26
Son4
TilRus

Kalit so‘zlar

polycrystalline thin films, telluride cadmium, impurity, alloyage, thermal processing, anomalous photovoltages properties, spectrum of photoluminescence, the potential barrier, the border of grains, intensity

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