This work is aimed at solving the problem of improving the selectivity of gas sensors. During thestudy, the kinetics and mechanism of methane oxidation in the presence of components of asemiconductor gas-sensitive material were investigated. The research was carried out using a gassensitive layer based on binary mixtures of cobalt and chromium oxides in a 1CoO + 1Cr₂O₃ ratio,synthesized by the sol–gel technique.
| Mualliflar | Eshkobilova, Mavjuda, Smanova, Zulaykho, Abdurakhmanov, Ilkhom, Ruzimurodov, Olim, Toshpulatov, Khurshid, Murodova, Zulfiya, Kholmurzaev, Farrukh, Abdurakhmanov, Ergash |
|---|---|
| Jurnal | Ўзбекистон Миллий университети хабарлари |
| Nashriyot | Ўзбекистон Миллий университети |
| ISSN | 2181-7324, 3093-8996 |
| Nashr sanasi | 2026-10-14 |
| Jild | 1 |
| Son | 1 |
| Betlar | 48-53 |
| Til | Ingliz |
| Indeksga qo‘shilgan | 2026-10-18 |
| APA | Eshkobilova, Mavjuda, Smanova, Zulaykho, Abdurakhmanov, Ilkhom, Ruzimurodov, Olim, Toshpulatov, Khurshid, Murodova, Zulfiya, Kholmurzaev, Farrukh, & Abdurakhmanov, Ergash (2026). KINETICS AND MECHANISM OF METHANE OXIDATION IN THE PRESENCE OF SEMICONDUCTOR GAS SENSOR MATERIAL COMPONENTS. Ўзбекистон Миллий университети хабарлари, 1(1), 48-53. https://journals.nuu.uz/index.php/modernchemistry/article/view/15453 |
|---|---|
| GOST (OAK) | Eshkobilova, Mavjuda va b. KINETICS AND MECHANISM OF METHANE OXIDATION IN THE PRESENCE OF SEMICONDUCTOR GAS SENSOR MATERIAL COMPONENTS // Ўзбекистон Миллий университети хабарлари. – 2026. – T. 1, № 1. – P. 48-53. |
| MLA | Eshkobilova, Mavjuda, Smanova, Zulaykho, Abdurakhmanov, Ilkhom, Ruzimurodov, Olim, Toshpulatov, Khurshid, Murodova, Zulfiya, Kholmurzaev, Farrukh, and Abdurakhmanov, Ergash. “KINETICS AND MECHANISM OF METHANE OXIDATION IN THE PRESENCE OF SEMICONDUCTOR GAS SENSOR MATERIAL COMPONENTS.” Ўзбекистон Миллий университети хабарлари, 1(1), 48-53, 2026. https://journals.nuu.uz/index.php/modernchemistry/article/view/15453 |
| Chicago | Eshkobilova, Mavjuda, Smanova, Zulaykho, Abdurakhmanov, Ilkhom, Ruzimurodov, Olim, Toshpulatov, Khurshid, Murodova, Zulfiya, Kholmurzaev, Farrukh, and Abdurakhmanov, Ergash. “KINETICS AND MECHANISM OF METHANE OXIDATION IN THE PRESENCE OF SEMICONDUCTOR GAS SENSOR MATERIAL COMPONENTS.” Ўзбекистон Миллий университети хабарлари, 1(1), 48-53 (2026). https://journals.nuu.uz/index.php/modernchemistry/article/view/15453 |
| Harvard | Eshkobilova, Mavjuda, Smanova, Zulaykho, Abdurakhmanov, Ilkhom, Ruzimurodov, Olim, Toshpulatov, Khurshid, Murodova, Zulfiya, Kholmurzaev, Farrukh, and Abdurakhmanov, Ergash (2026) ‘KINETICS AND MECHANISM OF METHANE OXIDATION IN THE PRESENCE OF SEMICONDUCTOR GAS SENSOR MATERIAL COMPONENTS’, Ўзбекистон Миллий университети хабарлари, 1(1), 48-53. https://journals.nuu.uz/index.php/modernchemistry/article/view/15453 |
| BibTeX | @article{eshkobilovamavjuda2026,
title = {KINETICS AND MECHANISM OF METHANE OXIDATION IN THE PRESENCE OF SEMICONDUCTOR GAS SENSOR MATERIAL COMPONENTS},
author = {Eshkobilova, Mavjuda and Smanova, Zulaykho and Abdurakhmanov, Ilkhom and Ruzimurodov, Olim and Toshpulatov, Khurshid and Murodova, Zulfiya and Kholmurzaev, Farrukh and Abdurakhmanov, Ergash},
journal = {Ўзбекистон Миллий университети хабарлари},
year = {2026},
volume = {1},
number = {1},
pages = {48-53},
url = {https://journals.nuu.uz/index.php/modernchemistry/article/view/15453}
} |
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