IMPACT OF SULFURIZATION ON SPUTTERED BIVO4 THIN FILMS

Shukur Gofurov, Dilbar Bozorova, KADIROVA Zuhra, Oksana Ismailova

Kimyo va kimyo texnologiyasi · 2024-yil

Annotatsiya

The sulfurization method has been used to decrease the band gap of the BiVO4 structure, reduce the recombination of electrons and holes, and increase the photoelectrochemical performance of this material. It has been observed that incorporation of sulfur into stoichiometric and Vrich BiVO4 is variously affected changing of properties of the structure. Sulfurization can modify Vrich BiVO4 structure rather than stoichiometric BiVO4.

Maqola ma’lumotlari
MualliflarShukur Gofurov, Dilbar Bozorova, KADIROVA Zuhra, Oksana Ismailova
JurnalKimyo va kimyo texnologiyasi
Nashr sanasi2024-04-29
Jild2023
Son4
Tilen
DOI10.70189/1992-9498.1485

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