Ftir spectrum analysis of silicon doped with erbium

Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev, Шарифа Б, Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов, Ходжакбар С. Далиев, Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev

Research Focus · 2025-yil

Annotatsiya

Semiconductor materials based silicon are a key component of modern microelectronics and optoelectronics. In particular, when Erbium (Er) is introduced into the crystal lattice, a number of important structural changes occur in the silicon structure. In silicon, such changes are particularly well detected by infrared (FTIR) spectroscopy, since this method can accurately record the vibrational modes of bonds such as Si–O–Si, Er–O, Si–C, etc. The formation of new phases in the structure, the degree of oxidation, and the concentration of optically active oxygen are estimated by the location, intensity, and width of the peaks obtained using FTIR. The most important changes were noted around the Si–O–Si assymmetric stretching vibration (νₐs) line. While this peak was detected at 1099 cm-¹ in the sample with erbium atoms introduced, in the original sample it shifted to 1109 cm-¹, its intensity also decreased, and the line broadened. These changes are explained by the formation of an oxygen-enriched but highly disordered amorphous SiOₓ layer during thermal treatment. As a result, the angle in the Si–O–Si bonds widens, the bond length increases slightly, which leads to a decrease in the vibrational frequency, along with a decrease in bond elasticity. The broadening of the peak indicates an increase in the angle and bond length distribution in the structure.

Maqola ma’lumotlari
MualliflarSharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev, Шарифа Б, Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов, Ходжакбар С. Далиев, Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev
JurnalResearch Focus
NashriyotВетеринария ИТИ ва “Илм-фан ва инновациялар академияси” МЧЖ
ISSN2181-3833
Nashr sanasi2025-12-05
Jild4
Son11
Betlar8-15
TilIngliz
Ilmiy sohaVeterinariya
DOI10.66073/researchfocus.v4i11.1823
Indeksga qo‘shilgan2026-09-08

DOI: 10.66073/researchfocus.v4i11.1823 · Maqolaning asl sahifasi

Kalit so‘zlar

monocrystalline silicon (n-Si), erbium, rare earth element, heat treatment, FTIR spectrometer, diffusion, монокристаллический кремний (n-Si), эрбий, редкоземельный элемент, термическая обработка, FTIR-спектрометр, диффузия, monokristall kremniy (n-Si), erbiy, noyob yer elementi, termik ishlov berish, FTIR spektrometr, diffuziya

Ilmiy soha

Veterinariya

Iqtibos keltirish

APASharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev, Шарифа Б, Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов, Ходжакбар С. Далиев, Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, & Khojakbar S. Daliyev (2025). FTIR SPECTRUM ANALYSIS OF SILICON DOPED WITH ERBIUM. Research Focus, 4(11), 8-15. https://doi.org/10.66073/researchfocus.v4i11.1823
GOST (OAK)Sharifa B va b. FTIR SPECTRUM ANALYSIS OF SILICON DOPED WITH ERBIUM // Research Focus. – 2025. – T. 4, № 11. – P. 8-15. – DOI: 10.66073/researchfocus.v4i11.1823.
MLASharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev, Шарифа Б, Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов, Ходжакбар С. Далиев, Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, and Khojakbar S. Daliyev. “FTIR SPECTRUM ANALYSIS OF SILICON DOPED WITH ERBIUM.” Research Focus, 4(11), 8-15, 2025. https://doi.org/10.66073/researchfocus.v4i11.1823
ChicagoSharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev, Шарифа Б, Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов, Ходжакбар С. Далиев, Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, and Khojakbar S. Daliyev. “FTIR SPECTRUM ANALYSIS OF SILICON DOPED WITH ERBIUM.” Research Focus, 4(11), 8-15 (2025). https://doi.org/10.66073/researchfocus.v4i11.1823
HarvardSharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, Khojakbar S. Daliyev, Шарифа Б, Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов, Ходжакбар С. Далиев, Sharifa B, Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov, and Khojakbar S. Daliyev (2025) ‘FTIR SPECTRUM ANALYSIS OF SILICON DOPED WITH ERBIUM’, Research Focus, 4(11), 8-15. https://doi.org/10.66073/researchfocus.v4i11.1823
BibTeX
@article{sharifab2025,
  title = {FTIR SPECTRUM ANALYSIS OF SILICON DOPED WITH ERBIUM},
  author = {Sharifa B and Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov and Khojakbar S. Daliyev and Шарифа Б and Утамурадова, Джонибек Дж. Хамдамов, Бекзод Ш. Аликулов and Ходжакбар С. Далиев and Sharifa B and Utamuradova, Jonibek J. Khamdamov, Bekzod Sh. Alikulov and Khojakbar S. Daliyev},
  journal = {Research Focus},
  year = {2025},
  volume = {4},
  number = {11},
  pages = {8-15},
  doi = {10.66073/researchfocus.v4i11.1823},
  url = {https://doi.org/10.66073/researchfocus.v4i11.1823}
}

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