Doping a silicon single crystal with terbium through diffusion.

Saidimov Ya.A., Rumi R.F., Umarov F.B., Саидимов Я.А., Руми Р.Ф., Умаров Ф.Б., Saidimov Ya.A., Rumi R.F., Umarov F.B.

Research Focus · 2024-yil

Annotatsiya

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

Maqola ma’lumotlari
MualliflarSaidimov Ya.A., Rumi R.F., Umarov F.B., Саидимов Я.А., Руми Р.Ф., Умаров Ф.Б., Saidimov Ya.A., Rumi R.F., Umarov F.B.
JurnalResearch Focus
NashriyotВетеринария ИТИ ва “Илм-фан ва инновациялар академияси” МЧЖ
ISSN2181-3833
Nashr sanasi2024-04-05
Jild3
Son3
Betlar8-10
TilIngliz
Ilmiy sohaVeterinariya
DOI10.66073/researchfocus.v3i3.919
Indeksga qo‘shilgan2026-09-08

DOI: 10.66073/researchfocus.v3i3.919 · Maqolaning asl sahifasi

Kalit so‘zlar

monocrystalline silicon, rare-earth elements, Terbium, diffusion method, alloying, Hall effect, Van der Pau method, type of conductivity, concentration of charge carriers, resistivity, монокристаллический кремний, редкоземельные элементы, тербий, метод диффузии, легирование, эффект Холла, метод Ван дер Пау, тип проводимости, концентрация носителей заряда, удельное сопротивление, monokristall kremniy, noyob yer elementlari, Terbiy, diffuziya usuli, legirlash, Xoll effekti, Van der Pau usuli, o'tkazuvchanlik turi, zaryad tashuvchilar konsentratsiyasi, solishtirma qarshilik

Ilmiy soha

Veterinariya

Iqtibos keltirish

APASaidimov Ya.A., Rumi R.F., Umarov F.B., Саидимов Я.А., Руми Р.Ф., Умаров Ф.Б., Saidimov Ya.A., Rumi R.F., & Umarov F.B. (2024). DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.. Research Focus, 3(3), 8-10. https://doi.org/10.66073/researchfocus.v3i3.919
GOST (OAK)Saidimov Ya.A. va b. DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION. // Research Focus. – 2024. – T. 3, № 3. – P. 8-10. – DOI: 10.66073/researchfocus.v3i3.919.
MLASaidimov Ya.A., Rumi R.F., Umarov F.B., Саидимов Я.А., Руми Р.Ф., Умаров Ф.Б., Saidimov Ya.A., Rumi R.F., and Umarov F.B. “DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION..” Research Focus, 3(3), 8-10, 2024. https://doi.org/10.66073/researchfocus.v3i3.919
ChicagoSaidimov Ya.A., Rumi R.F., Umarov F.B., Саидимов Я.А., Руми Р.Ф., Умаров Ф.Б., Saidimov Ya.A., Rumi R.F., and Umarov F.B. “DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION..” Research Focus, 3(3), 8-10 (2024). https://doi.org/10.66073/researchfocus.v3i3.919
HarvardSaidimov Ya.A., Rumi R.F., Umarov F.B., Саидимов Я.А., Руми Р.Ф., Умаров Ф.Б., Saidimov Ya.A., Rumi R.F., and Umarov F.B (2024) ‘DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.’, Research Focus, 3(3), 8-10. https://doi.org/10.66073/researchfocus.v3i3.919
BibTeX
@article{saidimovyaa2024,
  title = {DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.},
  author = {Saidimov Ya.A. and Rumi R.F. and Umarov F.B. and Саидимов Я.А. and Руми Р.Ф. and Умаров Ф.Б. and Saidimov Ya.A. and Rumi R.F. and Umarov F.B.},
  journal = {Research Focus},
  year = {2024},
  volume = {3},
  number = {3},
  pages = {8-10},
  doi = {10.66073/researchfocus.v3i3.919},
  url = {https://doi.org/10.66073/researchfocus.v3i3.919}
}

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