DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.

Saidimov Ya.A., Rumi R.F., Umarov F.B.

Research Focus · 2024-yil

Annotatsiya

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

Maqola ma’lumotlari
MualliflarSaidimov Ya.A., Rumi R.F., Umarov F.B.
JurnalResearch Focus
Nashr sanasi2024-04-05
Jild3
Son3
Betlar8-10
TilIngliz

Kalit so‘zlar

monocrystalline silicon, rare-earth elements, Terbium, diffusion method, alloying, Hall effect, Van der Pau method, type of conductivity, concentration of charge carriers, resistivity

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