This article experimentally investigates the effect of external pressure on the electrophysical properties of manganese-doped silicon. The diffusion of manganese atoms was carried out in p-type monocrystalline silicon samples. The results indicate that the presence of manganese clusters enhances the material's high strain sensitivity. This material is considered promising for the development of high-sensitivity strain sensors.
| Mualliflar | Tursınbaev, S.A. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2025-06-27 |
| Son | 4-1 |
| Betlar | 29-31 |
| Til | kaa |
marganets, kremniy, legirlash, diffuziya, bosim, sezgirlik, марганец, кремний, легирование, диффузия, давление, чувствительность, manganese, silicon, doping, diffusion, pressure, sensitivity
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