MARGANEC KIRISPE ATOMLARÍNÍŃ KLASTERLERINE IYE KREMNIYDIŃ TIYKARǴÍ PARAMETRLERINE BASÍMNÍŃ TÁSIRIN ÚYRENIW

Tursınbaev, S.A.

Ilim ha’m ja’miyet · 2025-yil

Annotatsiya

This article experimentally investigates the effect of external pressure on the electrophysical properties of manganese-doped silicon. The diffusion of manganese atoms was carried out in p-type monocrystalline silicon samples. The results indicate that the presence of manganese clusters enhances the material's high strain sensitivity. This material is considered promising for the development of high-sensitivity strain sensors.

Maqola ma’lumotlari
MualliflarTursınbaev, S.A.
JurnalIlim ha’m ja’miyet
Nashr sanasi2025-06-27
Son4-1
Betlar29-31
Tilkaa

Kalit so‘zlar

marganets, kremniy, legirlash, diffuziya, bosim, sezgirlik, марганец, кремний, легирование, диффузия, давление, чувствительность, manganese, silicon, doping, diffusion, pressure, sensitivity

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