This article considers that by forming clusters of impurity nickel atoms in the crystal lattice of silicon, it is possible to realize gettering of various uncontrolling impurities, as well as oxygen atoms stimulating the generation of recombination centers and thermal defects.
| Mualliflar | Исмайлов, К.А., Камалов, Х.У., Исмайлов, Б.К. |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2021-08-11 |
| Son | 3-1 |
| Betlar | 10-12 |
| Til | Rus |
геттерланиш, кремний, никель, диффузия, рекомбинация марказлари, gettering, silicon, nickel, diffusion, recombination centers
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