The influence of microwave radiation to the electrophysical characteristics of au-tib x –gaas diode structure

Kaypnazarov, S.G.

Ilim ha’m ja’miyet · 2017-yil

Annotatsiya

It is defined that during the effecting time of microwave radiation to the Au-TiBx-GaAs diode structure for 0-20sc the structure parameters have improved. In the result of microwave the branchis temperature stability of this diode structure is shown. In the result of these factors the change of external curvature radius has been determined.

Maqola ma’lumotlari
MualliflarKaypnazarov, S.G.
JurnalIlim ha’m ja’miyet
NashriyotНукус давлат педагогика институти
ISSN2010-720x, 2181-1555
Nashr sanasi2017-12-30
Son4
Betlar10-11
TilIngliz
Ilmiy sohaTexnika
Indeksga qo‘shilgan2026-08-26

Kalit so‘zlar

диодли структура, электрофизик ҳарактеристика, микро тўлқин нурланиши, деградация механизми, ички механик кучланиш (ИМК), ЖЙЧ нурлантириш, Шоттки диодлари, эгрилик радиуси, планар технология, кенгайтириш параметри, диодная структура, электрофизическая характеристика, микроволновые излучения, деградационный механизм, внутреннее механическое напряжение (ВМН), СВЧ излучения, диоды Шоттки, радиус кривизны, планарная технология, параметр уширений, diode structure, electro physical characteristics, micro wave radiation, degradational mechanism, internal mechanic stress, JYCh radiation, Schottky diodes, curvature radius, planar technology, broadening parameters

Ilmiy soha

Iqtibos keltirish

APAKaypnazarov, S.G. (2017). THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE. Ilim ha’m ja’miyet, (4), 10-11. https://journal.ndpi.uz/index/article/view/2017-4-004
GOST (OAK)Kaypnazarov, S.G. THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE // Ilim ha’m ja’miyet. – 2017. – № 4. – P. 10-11.
MLAKaypnazarov, S.G. “THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE.” Ilim ha’m ja’miyet, (4), 10-11, 2017. https://journal.ndpi.uz/index/article/view/2017-4-004
ChicagoKaypnazarov, S.G. “THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE.” Ilim ha’m ja’miyet, (4), 10-11 (2017). https://journal.ndpi.uz/index/article/view/2017-4-004
HarvardKaypnazarov, S.G (2017) ‘THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE’, Ilim ha’m ja’miyet, (4), 10-11. https://journal.ndpi.uz/index/article/view/2017-4-004
BibTeX
@article{kaypnazarovsg2017,
  title = {THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE},
  author = {Kaypnazarov, S.G.},
  journal = {Ilim ha’m ja’miyet},
  year = {2017},
  number = {4},
  pages = {10-11},
  url = {https://journal.ndpi.uz/index/article/view/2017-4-004}
}

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