UDC 621.3.082.782 DEPENDENCE OF THE TWO-DIMENSIONAL COMBINED DENSITY OF STATES ON THE ABSORBING PHOTON ENERGY IN GaAs/AlGaAs AT QUANTIZING MAGNETIC FIELD

Sayidov, Nozimjon

Наманган муҳандислик­технология институти илмий­техника журнали · 2023-yil

Annotatsiya

Objective. The influence of the two-dimensional density of states on the oscillations of the transverse electrical conductivity in heterostructures with rectangular quantum wells is studied. A new analytical expression is derived for calculating the temperature dependence of the oscillations of the transverse electrical conductivity and magnetoresistance of a quantum well. Methods. Oscillations of the electrical conductivity and magnetoresistance of a narrow-window quantum well with a nonparabolic dispersion law are studied. The proposed theory was used to study the results of experiments on a narrow-gap quantum well (InxGa1-xSb). Results. A new analytical expression is derived for calculating the temperature dependence of the oscillations of the transverse electrical conductivity and magnetoresistance of a quantum well. A mechanism has been developed for the oscillation of the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential ) at low temperatures and weak magnetic fields.

Maqola ma’lumotlari
MualliflarSayidov, Nozimjon
JurnalНаманган муҳандислик­технология институти илмий­техника журнали
Nashr sanasi2023-03-31
Jild8
Son1
Betlar124-135
TilIngliz

Kalit so‘zlar

semiconductor, magneto-optical absorption coefficient; Landau levels; oscillations of the combined density of states; modeling; pressures; temperatures.

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