Defect formation in iron-doped silicon single crystals

Kh.S. Daliev, Z.M. Khusanov, Х.С. Далиев, З.М. Хусанов, Kh.S. Daliev, Z.M. Khusanov

Research Focus · 2023-yil

Annotatsiya

The effect of diffusion alloying with iron on the electrical properties of heat-treated silicon obtained by the Czochralski method has been studied. It is shown that the presence of iron reduces the concentration of nucleation centers for thermal donors of "growth" origin. The latter circumstance caused a decrease in their initial speed; on the other hand, the admixture of iron reduced the probability of decay of thermal donors, leading to their transformation into an electrically passive state, which led to an increase in the concentration of thermal donors during prolonged heating. Heat treatment at temperatures above 600°C caused the iron impurity to lose its electrical activity. Hardening of Si <Fe> crystals from 1100÷1200 °C for 10 hours returned the iron atoms to the electrically active substitution position.

Maqola ma’lumotlari
MualliflarKh.S. Daliev, Z.M. Khusanov, Х.С. Далиев, З.М. Хусанов, Kh.S. Daliev, Z.M. Khusanov
JurnalResearch Focus
NashriyotВетеринария ИТИ ва “Илм-фан ва инновациялар академияси” МЧЖ
ISSN2181-3833
Nashr sanasi2023-06-05
Jild2
Son5
Betlar11-15
TilIngliz
Ilmiy sohaVeterinariya
DOI10.66073/researchfocus.v2i5.186
Indeksga qo‘shilgan2026-09-08

Kalit so‘zlar

morphology, vacancy, mobility, temperature, diffusion, composition, surface, thermal donors, морфология, вакансия, подвижность, температура, диффузия, состав, поверхность, термодоноры, morfologiya, vakansiya, harakatchanlik, harorat, diffuziya, tarkib, sirt, termodonorlar

Ilmiy soha

Iqtibos keltirish

APAKh.S. Daliev, Z.M. Khusanov, Х.С. Далиев, З.М. Хусанов, Kh.S. Daliev, & Z.M. Khusanov (2023). DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS. Research Focus, 2(5), 11-15. https://doi.org/10.66073/researchfocus.v2i5.186
GOST (OAK)Kh.S. Daliev va b. DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS // Research Focus. – 2023. – T. 2, № 5. – P. 11-15. – DOI: 10.66073/researchfocus.v2i5.186.
MLAKh.S. Daliev, Z.M. Khusanov, Х.С. Далиев, З.М. Хусанов, Kh.S. Daliev, and Z.M. Khusanov. “DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS.” Research Focus, 2(5), 11-15, 2023. https://doi.org/10.66073/researchfocus.v2i5.186
ChicagoKh.S. Daliev, Z.M. Khusanov, Х.С. Далиев, З.М. Хусанов, Kh.S. Daliev, and Z.M. Khusanov. “DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS.” Research Focus, 2(5), 11-15 (2023). https://doi.org/10.66073/researchfocus.v2i5.186
HarvardKh.S. Daliev, Z.M. Khusanov, Х.С. Далиев, З.М. Хусанов, Kh.S. Daliev, and Z.M. Khusanov (2023) ‘DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS’, Research Focus, 2(5), 11-15. https://doi.org/10.66073/researchfocus.v2i5.186
BibTeX
@article{khsdaliev2023,
  title = {DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS},
  author = {Kh.S. Daliev and Z.M. Khusanov and Х.С. Далиев and З.М. Хусанов and Kh.S. Daliev and Z.M. Khusanov},
  journal = {Research Focus},
  year = {2023},
  volume = {2},
  number = {5},
  pages = {11-15},
  doi = {10.66073/researchfocus.v2i5.186},
  url = {https://doi.org/10.66073/researchfocus.v2i5.186}
}

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