CURRENT TRANSFER IN p-Si–n-(Si2)1-x(GaN)x HETEROSTRUCTURE

Zhuraev Asom Kuylibayevich

Қўқон университети хабарномаси · 2023-yil

Annotatsiya

This paper presents the results of a study on the growth of substitutional solid solutions (Si2)1-x(GaN)x on single-crystal Si (111) substrates by liquid-phase epitaxy from a limited volume of a tin solution-melt in a hydrogen medium and the current-voltage characteristic (CVC) of p-Si-n-(Si2)1-x(GaN)x structures.

Maqola ma’lumotlari
MualliflarZhuraev Asom Kuylibayevich
JurnalҚўқон университети хабарномаси
Nashr sanasi2023-05-15
Betlar56-59
TilIngliz

Kalit so‘zlar

solid solutions, Si2, GaNx, single crystal, liquid phase epitaxy from tin solution, hydrogen environment, voltage characteristics.

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